In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications

ABSTRACTWe have used in situ Auger spectroscopic analysis to investigate the composition of InP surfaces cleaned in rf H2 plasmas and etched in rf H2/CH4/Ar plasmas. In general agreement with previous results, hydrogen plasma treatment is found to remove surface carbon and oxygen impurities but also leads to substantial surface phosphorus depletion if not carefully controlled. Low plasma exposure times and rf power settings minimize both phosphorus depletion and surface roughening. Surfaces etched in H2/CH4/Ar plasmas can show severe phosphorus depletion in high density plasmas leading to etch rates of ∼ 700 Å/min, but this effect is greatly reduced in lower density plasmas that produce etch rates of 30–400 Å/min.

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The effect of hydrogen plasma on the properties of indium-tin oxide films

Journal of Materials Research ◽

10.1557/jmr.1988.0723 ◽

1988 ◽

Vol 3 (4) ◽

pp. 723-728 ◽

Cited By ~ 6

Author(s):

S. Major ◽

M. C. Bhatnagar ◽

S. Kumar ◽

K. L. Chopra

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Metal Layer ◽

Hydrogen Plasma ◽

Oxide Films ◽

Film Surface ◽

Plasma Exposure ◽

Visible Transmittance ◽

Tin Oxide Films ◽

Reduced Surface

The effect of hydrogen plasma exposure on the properties of transparent conducting indium-tin oxide films has been studied. The exposure reduces the film surface to elemental indium. The thickness of the reduced layer increases with increasing exposure and finally saturates to a thickness of about 100 nm. The reduced surface is rough and decreases the visible transmittance of these films drastically due to increased absorptance and reflectance. The reduced metal layer decreases the sheet resistance of the films. Annealing of the plasma-exposed film in oxygen recovers the visible transmittance except in the case of the severely damaged films.

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Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4831915 ◽

2014 ◽

Vol 32 (1) ◽

pp. 01A108 ◽

Cited By ~ 6

Author(s):

Rohan P. Chaukulkar ◽

Nick F. W. Thissen ◽

Vikrant R. Rai ◽

Sumit Agarwal

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Absorption Spectroscopy ◽

Hydrogen Plasma ◽

Atomic Layer ◽

Infrared Reflection Absorption Spectroscopy ◽

Layer Deposition ◽

Infrared Reflection

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Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films

Applied Physics Letters ◽

10.1063/1.5135709 ◽

2020 ◽

Vol 116 (3) ◽

pp. 032901 ◽

Cited By ~ 3

Author(s):

Glen Walters ◽

Aniruddh Shekhawat ◽

Saeed Moghaddam ◽

Jacob L. Jones ◽

Toshikazu Nishida

Keyword(s):

Zirconium Oxide ◽

Hydrogen Plasma ◽

Oxide Films

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In Situ Monitoring of Surface Reactions during Atomic Layer Etching of Silicon Nitride Using Hydrogen Plasma and Fluorine Radicals

ACS Applied Materials & Interfaces ◽

10.1021/acsami.9b11489 ◽

2019 ◽

Vol 11 (40) ◽

pp. 37263-37269 ◽

Cited By ~ 5

Author(s):

Kazuya Nakane ◽

René H. J. Vervuurt ◽

Takayoshi Tsutsumi ◽

Nobuyoshi Kobayashi ◽

Masaru Hori

Keyword(s):

Silicon Nitride ◽

Hydrogen Plasma ◽

Surface Reactions ◽

Atomic Layer ◽

In Situ Monitoring ◽

Atomic Layer Etching

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Effect of an in situ hydrogen plasma pre-treatment on the reduction of GaSb native oxides prior to atomic layer deposition

Applied Surface Science ◽

10.1016/j.apsusc.2013.04.018 ◽

2013 ◽

Vol 277 ◽

pp. 167-175 ◽

Cited By ~ 33

Author(s):

Erin R. Cleveland ◽

Laura B. Ruppalt ◽

Brian R. Bennett ◽

S.M. Prokes

Keyword(s):

Atomic Layer Deposition ◽

Hydrogen Plasma ◽

Atomic Layer ◽

Native Oxides ◽

Layer Deposition ◽

Pre Treatment

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Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4767813 ◽

2013 ◽

Vol 31 (1) ◽

pp. 01A124 ◽

Cited By ~ 16

Author(s):

Tae-Hoon Jung ◽

Jin-Seong Park ◽

Dong-Ho Kim ◽

Yongsoo Jeong ◽

Sung-Gyu Park ◽

...

Keyword(s):

Zinc Oxide ◽

Low Temperature ◽

Atomic Layer Deposition ◽

Plasma Treatment ◽

Hydrogen Plasma ◽

Atomic Layer ◽

Layer Deposition

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Plasma-assisted Atomic Layer Deposition of TiN Films at low Deposition Temperature for High-aspect Ratio Applications

MRS Proceedings ◽

10.1557/proc-863-b6.4 ◽

2005 ◽

Vol 863 ◽

Cited By ~ 2

Author(s):

S.B.S. Heil ◽

E. Langereis ◽

F. Roozeboom ◽

A. Kemmeren ◽

N.P. Pham ◽

...

Keyword(s):

Growth Rate ◽

Aspect Ratio ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Impurity Level ◽

Plasma Exposure ◽

Tin Films ◽

Layer Deposition ◽

Low Deposition Temperature

AbstractA plasma-assisted atomic layer deposition (PA-ALD) process of titanium nitride (TiN) using TiCl4 precursor dosing and H2/N2 plasma exposure is presented. In situ spectroscopic ellipsometry revealed a growth rate at 400 °C of ∼0.7 A/cycle independent of precursor dosing. Varying the plasma exposure time changed the stoichiometry [N]/[Ti] of the films within the range ∼0.93-1.15. At 100 °C a relatively low chlorine impurity level (∼2 at. %) and low resistivity (∼200 νΔcm) were obtained for a ∼45 nm thick film. The growth rate was found to be considerably lower (∼0.3 Å/cycle) at this temperature. Using TEM imaging we found that PAALD TiN films can be deposited conformally in 20:1 aspect-ratio features (1.5 Êm width) but that the step coverage still needs to be improved, probably by a prolonged plasma exposure step.

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