Abstract
The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.
Microwave Characterization of Conductive PLA and its Application to a 12 to 18 GHz 3-D Printed Rotary Vane Attenuator