All-electrical Microwave Characterization of High-speed Optoelectronic Devices with Self-reference and On-chip Capability

Abstract The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.

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On-Chip Thermal Insulation Using Porous GaN

Proceedings ◽

10.3390/proceedings2130776 ◽

2018 ◽

Vol 2 (13) ◽

pp. 776 ◽

Cited By ~ 2

Author(s):

Bogdan F. Spiridon ◽

Peter H. Griffin ◽

John C. Jarman ◽

Yingjun Liu ◽

Tongtong Zhu ◽

...

Keyword(s):

Thermal Insulation ◽

High Speed ◽

Thermal Characterization ◽

Semiconductor Materials ◽

3Ω Method ◽

Theoretical Predictions ◽

Order Of Magnitude ◽

On Chip ◽

Fundamental Requirement

This study focuses on the thermal characterization of porous gallium nitride (GaN) usingan extended 3ω method. Porous semiconductor materials provide a solution to the need for on-chipthermal insulation, a fundamental requirement for low-power, high-speed and high-accuracythermal sensors. Thermal insulation is especially important in GaN devices, due to the intrinsicallyhigh thermal conductivity of the material. The results show one order of magnitude reduction inthermal conductivity, from 130 W/mK to 10 W/mK, in line with theoretical predictions for porousmaterials. This achievement is encouraging in the quest for integrating sensors with opto-, powerandRF-electronics on a single GaN chip.

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Two-tone intensity-modulated optical stimulus for self-referencing microwave characterization of high-speed photodetectors

Optics Communications ◽

10.1016/j.optcom.2015.08.028 ◽

2016 ◽

Vol 373 ◽

pp. 110-113 ◽

Cited By ~ 2

Author(s):

Heng Wang ◽

Shangjian Zhang ◽

Xinhai Zou ◽

Yali Zhang ◽

Rongguo Lu ◽

...

Keyword(s):

High Speed ◽

Intensity Modulated ◽

Microwave Characterization ◽

Tone Intensity

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Integrated Optoelectronic Materials and Circuits for Optical Interconnects

MRS Proceedings ◽

10.1557/proc-108-407 ◽

1987 ◽

Vol 108 ◽

Author(s):

L. D. Hutcheson

Keyword(s):

Optical Interconnects ◽

High Speed ◽

Optoelectronic Devices ◽

Critical Issue ◽

Optoelectronic Materials ◽

Input Output ◽

Strong Case ◽

On Chip

ABSTRACTConventional interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high speed silicon and GaAs based technologies. In recent years clock speeds and on-chip density for VLSI/VHSIC technology has made packaging these high speed chips extremely difficult. A strong case can be made for using optical interconnects for on-chip/on-wafer, chip-to-chip and board-to-board high speed communications. GaAs Integrated Optoelectronic Circuits (IOC's) are being developed in a number of laboratories for performing Input/Output functions at all levels. In this paper integrated optoelectronic materials, electronics and optoelectronic devices are presented. IOC's are examined from the standpoint of what it takes to fabricate the devices and what performance can be expected.

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