Nozzleless Acoustic Droplet Ejector With Electrically Tunable Droplet Size for Picking and Placing Semiconductor Chips

Author(s):  
Yongkui Tang ◽  
Eun Sok Kim
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).


2011 ◽  
Vol 21 (3) ◽  
pp. 263-274 ◽  
Author(s):  
Jiabing Gu ◽  
Heping Zhu ◽  
Weimin Ding ◽  
Hong Young Jeon

2006 ◽  
Vol 16 (6) ◽  
pp. 673-686 ◽  
Author(s):  
Laszlo E. Kollar ◽  
Masoud Farzaneh ◽  
Anatolij R. Karev

2002 ◽  
Vol 12 (1-3) ◽  
pp. 267-282 ◽  
Author(s):  
Milton E. Teske ◽  
Harold W. Thistle ◽  
Andrew J. Hewitt ◽  
I. W. Kirk

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