Fabrication, Simulation, and Experimental Characterization of EWT Solar Cells With Deep Grooved Base Contact

2016 ◽  
Vol 6 (5) ◽  
pp. 1072-1079 ◽  
Author(s):  
Giovanni Paternoster ◽  
Massimo Nicolai ◽  
Giuseppe de Ceglia ◽  
Mauro Zanuccoli ◽  
Pierluigi Bellutti ◽  
...  
Keyword(s):  
Solar Cells ◽  
Experimental Characterization ◽  
Base Contact

scholarly journals Numerical Simulation and Experimental Characterization of Emitter Wrap through Solar Cells with Deep Grooved Base Contact (EWT-DGB)

2016 ◽  
Vol 92 ◽  
pp. 160-169 ◽  
Author(s):  
Massimo Nicolai ◽  
Mauro Zanuccoli ◽  
Giovanni Paternoster ◽  
Giuseppe de Ceglia ◽  
Lorenza Ferrario ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Solar Cells ◽  
Experimental Characterization ◽  
Base Contact

Understanding experimental characterization of intermediate band solar cells

2012 ◽  
Vol 22 (43) ◽  
pp. 22832 ◽  
Author(s):  
Antonio Martí ◽  
E. Antolín ◽  
P. G. Linares ◽  
A. Luque
Keyword(s):  
Solar Cells ◽  
Experimental Characterization ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells

Experimental Characterization of the Reliability of 3-Terminal Dual-Damascene Copper Interconnect Trees

2002 ◽  
Vol 716 ◽  
Author(s):  
C. L. Gan ◽  
C. V. Thompson ◽  
K. L. Pey ◽  
W. K. Choi ◽  
F. Wei ◽  
...  
Keyword(s):  
Stress Conditions ◽  
Experimental Characterization ◽  
Contact Lines ◽  
Tree Structures ◽  
Similar Test ◽  
Dual Damascene ◽  
Copper Interconnect ◽  
Test Conditions

AbstractElectromigration experiments have been carried out on simple Cu dual-damascene interconnect tree structures consisting of straight via-to-via (or contact-to-contact) lines with an extra via in the middle of the line. As with Al-based interconnects, the reliability of a segment in this tree strongly depends on the stress conditions of the connected segment. Beyond this, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are thought to be associated with variations in the architectural schemes of the two metallizations. The absence of a conducting electromigrationresistant overlayer in Cu technology, and the possibility of liner rupture at stressed vias lead to significant differences in tree reliabilities in Cu compared to Al.

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