Enhanced optical polarization anisotropy in quantum wells under anisotropic tensile strain

AbstractSemipolar InGaN/GaN quantum wells (QWs) are quite attractive as visible light emitters. One of the reasons is that a better optical transition probability is expected because of weaker internal electric fields, compared to conventional polar QWs. In addition, in-plane optical polarization anisotropy, which is absent in conventional QWs, is another relevant property because it affects device design and also may provide a means for novel applications. We revealed that the in-plane optical anisotropy in semipolar QWs switched from one direction perpendicular to the [0001] crystal axis to the perpendicular direction as the In composition increases. This is a property unique to semipolar QWs and enables, for example, to make cavity mirrors of laser diodes by cleavage. In this article, we describe the concept of semipolar planes and fabrication of high-quality epitaxial films for semipolar QWs. Furthermore, we discuss device fabrication and optical polarization anisotropy.

Download Full-text

The Effect Of Composition Modification on the Optical Polarization Independence In Semiconductor Strain Quantum Wells

MRS Proceedings ◽

10.1557/proc-417-277 ◽

1995 ◽

Vol 417 ◽

Cited By ~ 3

Author(s):

Wallace C. H. Choy ◽

Hao Feng ◽

S. K. Kam ◽

E. Herbert Li

Keyword(s):

Quantum Wells ◽

Optical Switching ◽

Tensile Strain ◽

High Strain ◽

Light Hole ◽

Optical Polarization ◽

Composition Modification ◽

Polarization Insensitivity ◽

Polarization Independent ◽

Semiconductor Strain

AbstractPolarization independent quantum well (QW) materials operating under electroabsorption effect in optical switching and modulation devices are of intense interest recently. This is a theoretical analysis of the optical properties of strained InGaAs/InP QWs. The method of composition modification based on interdiffusion will be introduced to merge the heavy- and light- hole states in order to achieve polarization insensitivity. Results presented here show that the diffused QWs with and without as-growth tensile strain can both serve in polarization independent electro-absorption requirements. With a suitable design in the interdiffused QW materials, the optical polarization independence can operate from 1.465 to 1.540 μm (tunability of 75 nm) with a maximum absorption change of 2000 cm−1. In the case studied here, over 75% reduction in the required as-growth tensile strain is achieved as compared with the conventional rectangular QWs. This provides us with a simpler way to achieve high strain optical polarization independence through interdiffusion.

Download Full-text

Optical polarization anisotropy of quantum wells induced by a cubic anisotropy of the host material

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(01)00232-6 ◽

2002 ◽

Vol 13 (1) ◽

pp. 24-35 ◽

Cited By ~ 3

Author(s):

S.M. Ryabchenko ◽

Yu.G. Semenov ◽

A.V. Komarov ◽

T. Wojtowicz ◽

G. Cywiński ◽

...

Keyword(s):

Quantum Wells ◽

Host Material ◽

Optical Polarization ◽

Polarization Anisotropy ◽

Cubic Anisotropy

Download Full-text

Optical polarization anisotropy of tensile strained InGaN/AlInN quantum wells for TM mode lasers

Journal of Applied Physics ◽

10.1063/1.3498805 ◽

2010 ◽

Vol 108 (8) ◽

pp. 083108 ◽

Cited By ~ 10

Keyword(s):

Quantum Wells ◽

Optical Polarization ◽

Polarization Anisotropy ◽

Tm Mode

Download Full-text

Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

Scientific Reports ◽

10.1038/s41598-020-71590-x ◽

2020 ◽

Vol 10 (1) ◽

Author(s):

Hwan-Seop Yeo ◽

Kwanjae Lee ◽

Young Chul Sim ◽

Seoung-Hwan Park ◽

Yong-Hoon Cho

Keyword(s):

Quantum Wire ◽

Quantum Wires ◽

Geometrical Shape ◽

Optical Polarization ◽

Polarization Anisotropy ◽

Single Quantum ◽

Group Iii ◽

Highly Efficient ◽

Group Iii Nitride ◽

Size Controlled

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

Download Full-text