Role of Strain-Induced Microscale Compositional Pulling on Optical Properties of High Al Content AlGaN Quantum Wells for Deep-Ultraviolet LED

A systematic study was carried out for strain-induced microscale compositional pulling effect on the structural and optical properties of high Al content AlGaN multiple quantum wells (MQWs). Investigations reveal that a large tensile strain is introduced during the epitaxial growth of AlGaN MQWs, due to the grain boundary formation, coalescence and growth. The presence of this tensile strain results in the microscale inhomogeneous compositional pulling and Ga segregation, which is further confirmed by the lower formation enthalpy of Ga atom than Al atom on AlGaN slab using first principle simulations. The strain-induced microscale compositional pulling leads to an asymmetrical feature of emission spectra and local variation in emission energy of AlGaN MQWs. Because of a stronger three-dimensional carrier localization, the area of Ga segregation shows a higher emission efficiency compared with the intrinsic area of MQWs, which is benefit for fabricating efficient AlGaN-based deep-ultraviolet light-emitting diode.

In situ transmission electron microscopy observation of the deformation and fracture processes of an epoxy/silica nanocomposite

Herein, we report the in situ transmission electron microscopy observation of the deformation and fracture processes of an epoxy resin thin film containing silica nanoparticles under tensile strain. Under tensile...

Monitoring of the Variation in Pore Sizes of Woven Geotextiles with Uniaxial Tensile Strain

Characteristic pore-opening size O95 or O90 has been widely used in the filter design of woven geotextiles. These manufactured products have different pore size proportions of large pore diameters, medium pore diameters, and small pore diameters, respectively. Therefore, uncertainties still exist regarding the prediction of geotextile pore diameter variations under the uniaxial tensile strain. This paper investigates the variations in five characteristic pore-opening sizes O95, O80, O50, O30, and O10, with uniaxial tensile strain by using the image analysis method. The large pore diameters, medium pore diameters, and small pore diameters show different variation behaviors as the uniaxial tensile strain increases. Fifteen specific pores are selected and then their pore diameter variations are monitored under each tensile strain of 1%. The colorful pore size distribution diagram is a visual way to identify the variation of pores arranged in the tension direction (warp direction) and the direction perpendicular to tensile loads (weft direction). The various pore diameters are proved to agree well with the bell-shaped Gaussian distribution. The results exhibit an accurate prediction of the variation in large pore sizes, medium pore sizes, and small pore sizes, respectively, for all tested woven geotextiles with uniaxial tensile strain.

Effect of Temperature Fluctuations on the Bearing Capacity of Cold In-Depth Recycled Pavements

This study investigates the influence of the temperature fluctuations on the bearing capacity of cold in-depth recycled (CIR) pavements stabilized with foamed asphalt (FA). Aiming to achieve this goal, non-destructive testing was conducted during mild and high temperatures on a highway CIR pavement, utilizing mainly the FWD device. The back-calculated moduli values were utilized to estimate the strain values within the body of the pavement, while the strains induced using the FWD device were measured with a fiber optic sensors (FOS) system. Moreover, data from the fatigue behavior of the layer materials was also considered. The results of the related analysis indicate that for every 1 °C temperature increase within the body of the AC overlay, an approximately 5.7% increase of the critical tensile strain is expected. Moreover, for every 1 °C temperature increase within the body of the FA layer, an approximately 1.8% increase of the tensile strain at the bottom of the FA layer is expected. The new constructed layers, i.e., asphalt concrete (AC) and FA, sustain much more damage at high temperatures. This was more evident in the upper layer, i.e., the AC overlay.

Strain effects on electronic, optical properties and carriers mobility of Cs2SnI6 double perovskite: A promising photovoltaic material

Owing to the fascinating optoelectronic and photovoltaic properties, perovskite halide materials have attracted much attention for solar cells applications. Using the first-principles approaches, we present here results of calculations of the strain effects on electronic and optical properties as well as carriers mobility of CsSnI double perovskite. The calculated band gap energy of unstrained CsSnI is about 1.257 eV when using Tran-Blaha modified Becke Johnson (mBJ) exchange potential that is in fair agreement with experimental measurements. Under the applied strains, this band gap value increases up to 1.316 eV for -4% compressive strain and decreases till 1.211 eV for 4% tensile strain. This effect is mainly due to the fact that the conduction band minimum shifts under compressive and tensile strains. From carrier mobility calculations, we notice that under tensile strain both hole and electron carrier mobilitiy diminishes, whereas the carrier mobility increases by 25.7 % for electron and by 15 % for holes under -4% compressive strain. Moreover, the optical analysis reveals that applied strain can affect the optical properties of CsSnI perovskite.

Influence of Modulus of Base Layer on The Strain Distribution for Asphalt Pavement

In order to investigate the influence of modulus of the base layer on the strain distribution for asphalt pavement, the modulus ratio of the base layer and the AC layer (Rm) is introduced as a controlled variable when keeping modulus of the AC layer as a constant in this paper. Then, a three-layered pavement structure is selected as an analytical model, which consists of an AC layer with the constant modulus and a base layer with the variable modulus covering the subgrade. A three dimensional (3D) finite element model was established to estimate the strains along the horizontal and vertical direction in the AC layer under different Rm. The results show that Rm will change the distribution of the horizontal strains along the depth in the AC layer; the increase of Rm could reduce the maximum tensile strain in the AC layer, but its effect is limited; the maximum tensile strain in the AC layer does not necessarily occur at the bottom, but gradually rises to the middle with the increase of Rm. Rm could significantly decline the bottom strain in the AC layer, and there is a certain difference between the bottom and the maximum strain when Rm is greater than or equal to one, which will enlarge with increasing Rm. Rm could change the depth of the neutral axis in the AC layer, and the second neutral axis will appear at the bottom of the AC layer under a sufficiently large Rm. The average vertical compressive strain in the AC layer will significantly enlarge with the increase of Rm.

Biaxial Tensile Strain-Induced Enhancement of Thermoelectric Efficiency of α-Phase Se2Te and SeTe2 Monolayers

Thermoelectric (TE) materials can convert waste heat into electrical energy, which has attracted great interest in recent years. In this paper, the effect of biaxial-tensile strain on the electronic properties, lattice thermal conductivity, and thermoelectric performance of α-phase Se2Te and SeTe2 monolayers are calculated based on density-functional theory and the semiclassical Boltzmann theory. The calculated results show that the tensile strain reduces the bandgap because the bond length between atoms enlarges. Moreover, the tensile strain strengthens the scatting rate while it weakens the group velocity and softens the phonon model, leading to lower lattice thermal conductivity kl. Simultaneously, combined with the weakened kl, the tensile strain can also effectively modulate the electronic transport coefficients, such as the electronic conductivity, Seebeck coefficient, and electronic thermal conductivity, to greatly enhance the ZT value. In particular, the maximum n-type doping ZT under 1% and 3% strain increases up to six and five times higher than the corresponding ZT without strain for the Se2Te and SeTe2 monolayers, respectively. Our calculations indicated that the tensile strain can effectively enhance the thermoelectric efficiency of Se2Te and SeTe2 monolayers and they have great potential as TE materials.