A 3 Megapixel 100 Fps 2.8 $\mu$m Pixel Pitch CMOS Image Sensor Layer With Built-in Self-Test for 3D Integrated Imagers

2013 ◽  
Vol 48 (3) ◽  
pp. 839-849 ◽  
Author(s):  
Shang-Fu Yeh ◽  
Chih-Cheng Hsieh ◽  
Ka-Yi Yeh
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Sensor Layer ◽  
Self Test ◽  
Built In Self Test ◽  
Pixel Pitch

A 3.4 μm pixel pitch global shutter CMOS image sensor with dual in-pixel charge domain memory

2019 ◽  
Vol 58 (SB) ◽  
pp. SBBL02
Author(s):  
Masahiro Kobayashi ◽  
Hiroshi Sekine ◽  
Takafumi Miki ◽  
Takashi Muto ◽  
Toshiki Tsuboi ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Pixel Pitch

scholarly journals Development of Gentle Slope Light Guide Structure in a 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology

Sensors ◽  
2017 ◽  
Vol 17 (12) ◽  
pp. 2860 ◽  
Author(s):  
Hiroshi Sekine ◽  
Masahiro Kobayashi ◽  
Yusuke Onuki ◽  
Kazunari Kawabata ◽  
Toshiki Tsuboi ◽  
...  
Keyword(s):  
Light Guide ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Gentle Slope ◽  
Pixel Pitch

A 6.9- $\mu$ m Pixel-Pitch Back-Illuminated Global Shutter CMOS Image Sensor With Pixel-Parallel 14-Bit Subthreshold ADC

2018 ◽  
Vol 53 (11) ◽  
pp. 3017-3025 ◽  
Author(s):  
Masaki Sakakibara ◽  
Koji Ogawa ◽  
Shin Sakai ◽  
Yasuhisa Tochigi ◽  
Katsumi Honda ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Back Illuminated ◽  
Pixel Pitch

A 3.9-/spl mu/m pixel pitch VGA format 10-b digital output CMOS image sensor with 1.5 transistor/pixel

2004 ◽  
Vol 39 (12) ◽  
pp. 2417-2425 ◽  
Author(s):  
H. Takahashi ◽  
M. Kinoshita ◽  
K. Morita ◽  
T. Shirai ◽  
T. Sato ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Digital Output ◽  
Pixel Pitch

scholarly journals A High Full Well Capacity CMOS Image Sensor for Space Applications

Sensors ◽  
2019 ◽  
Vol 19 (7) ◽  
pp. 1505 ◽  
Author(s):  
Woo-Tae Kim ◽  
Cheonwi Park ◽  
Hyunkeun Lee ◽  
Ilseop Lee ◽  
Byung-Geun Lee
Keyword(s):  
Modulation Transfer Function ◽  
Incident Light ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Damage Effect ◽  
Modulation Transfer ◽  
Incident Light Intensity ◽  
Space Applications ◽  
Mos Capacitor ◽  
Pixel Pitch

This paper presents a high full well capacity (FWC) CMOS image sensor (CIS) for space applications. The proposed pixel design effectively increases the FWC without inducing overflow of photo-generated charge in a limited pixel area. An MOS capacitor is integrated in a pixel and accumulated charges in a photodiode are transferred to the in-pixel capacitor multiple times depending on the maximum incident light intensity. In addition, the modulation transfer function (MTF) and radiation damage effect on the pixel, which are especially important for space applications, are studied and analyzed through fabrication of the CIS. The CIS was fabricated using a 0.11 μm 1-poly 4-metal CIS process to demonstrate the proposed techniques and pixel design. A measured FWC of 103,448 electrons and MTF improvement of 300% are achieved with 6.5 μm pixel pitch.

A 6.9 μm Pixel-Pitch 3D Stacked Global Shutter CMOS Image Sensor with 3M Cu-Cu connections

2019 ◽  
Author(s):  
Tsukasa Miura ◽  
Masaki Sakakibara ◽  
Hirotsugu Takahashi ◽  
Tadayuki Taura ◽  
Keiji Tatani ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Pixel Pitch
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