scholarly journals Cell-Based Variable-Gain Amplifiers With Accurate dB-Linear Characteristic in 0.18 µm CMOS Technology

2015 ◽  
Vol 50 (2) ◽  
pp. 586-596 ◽  
Author(s):  
Hang Liu ◽  
Xi Zhu ◽  
Chirn Chye Boon ◽  
Xiaofeng He
Keyword(s):  
Cmos Technology ◽  
Variable Gain Amplifiers ◽  
Variable Gain ◽  
Linear Characteristic

THE DIFFERENTIAL DIFFERENCE OPERATIONAL FLOATING AMPLIFIER: NEW CMOS REALIZATIONS AND APPLICATIONS

2009 ◽  
Vol 18 (07) ◽  
pp. 1287-1308 ◽  
Author(s):  
EMAN A. SOLIMAN ◽  
SOLIMAN A. MAHMOUD
Keyword(s):  
Analog Circuits ◽  
Cmos Technology ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Variable Gain Amplifiers ◽  
Variable Gain ◽  
Fully Differential ◽  
Filter Performance ◽  
Low Pass ◽  
Band Pass

This paper presents different novel CMOS realizations for the differential difference operational floating amplifier (DDOFA). The DDOFA was first introduced in Ref. 1 and was used to realize different analog circuits like integrators, filters and variable gain amplifiers. New CMOS realizations for the DDOFA are introduced in this literature. Furthermore the DDOFA is modified to realize a fully differential current conveyor (FDCC). Novel CMOS realizations of the FDCC are presented. The FDCC is used to realize second-order band pass–low-pass filter. Performance comparisons between the different realizations of the DDOFA and FDCC are given in this literature. PSPICE simulations of the overall proposed circuits are given using 0.25 μm CMOS Technology from TMSC MOSIS model and dual supply voltages of ±1.5 V.

10 Gb/s Burst-Mode Transimpedance Preamplifier in 0.13µm CMOS Technology

2012 ◽  
Vol 241-244 ◽  
pp. 2215-2220
Author(s):  
Gao Wei Gu ◽  
En Zhu
Keyword(s):  
Gain Control ◽  
Cmos Technology ◽  
Fast Response ◽  
High Gain ◽  
Settling Time ◽  
Output Buffer ◽  
Peak Detector ◽  
Burst Mode ◽  
Variable Gain ◽  
Response Peak

A 10Gbit/s burst-mode transimpedance preamplifier is described. Regulated cascade (RGC) TIA core with variable gain, fast response peak detector, single-to-differential and output buffer are included, providing auto-gain-control and threshold extraction functions. The burst-mode preamplifier is implemented by 0.13µm CMOS technology, presents a high gain of 67.9dB with a 3-dB bandwidth of 6.92GHz and a low gain of 57.4dB with a 3-dB bandwidth of 8.60GHz with a settling time less than 20ns.

scholarly journals Binary Memory Implemented by Using Variable Gain Amplifiers With Multipliers

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 197276-197286
Author(s):  
Jiri Petrzela ◽  
Roman Sotner
Keyword(s):  
Variable Gain Amplifiers ◽  
Variable Gain
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