The effect of the gate-drain distance on high frequency and noise performance for AlGaN/GaN HEMT

Aims:: The potentiality of Multiple Quantum Well (MQW) Impacts Avalanche Transit Time (IMPATT) diodes based on Si~3C-SiC heterostructures as possible terahertz radiators have been explored in this paper. Objective:: The static, high frequency and noise performance of MQW devices operating at 94, 140, and 220 GHz atmospheric window frequencies, as well as 0.30 and 0.50 THz frequency bands, have been studied in this paper. Methods: The simulation methods based on a Self-Consistent Quantum Drift-Diffusion (SCQDD) model developed by the authors have been used for the above-mentioned studies. Results: Thus the noise performance of MQW DDRs will be obviously better as compared to the flat Si DDRs operating at different mm-wave and THz frequencies. Conclusion:: Simulation results show that Si~3C-SiC MQW IMPATT sources are capable of providing considerably higher RF power output with the significantly lower noise level at both millimeter-wave (mm-wave) and terahertz (THz) frequency bands as compared to conventional flat Si IMPATT sources.

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Design of High-Frequency Half-Bridge Converter with GaN HEMT

2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE) ◽

10.1109/ecice50847.2020.9301981 ◽

2020 ◽

Author(s):

Van-Tsai Liu ◽

Hao-Ruey Liu ◽

Lun-Yu Yuan

Keyword(s):

High Frequency ◽

Gan Hemt

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Optimal utilization of low voltage GaN HEMT in high frequency boost converter

2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) ◽

10.1109/icpe.2015.7168030 ◽

2015 ◽

Cited By ~ 1

Author(s):

Wenbo Wang ◽

Frans Pansier ◽

Jelena Popovic ◽

J.A. Ferreira

Keyword(s):

High Frequency ◽

Low Voltage ◽

Boost Converter ◽

Gan Hemt

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Effect of the surface and barrier defects on the AlGaN/GaN HEMT low-frequency noise performance

IEEE Electron Device Letters ◽

10.1109/led.2003.816588 ◽

2003 ◽

Vol 24 (9) ◽

pp. 535-537 ◽

Cited By ~ 57

Author(s):

A.V. Vertiatchikh ◽

L.F. Eastman

Keyword(s):

Low Frequency ◽

Frequency Noise ◽

Noise Performance ◽

Low Frequency Noise ◽

Gan Hemt

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Modeling of High Frequency and High Efficiency GaN HEMT Power Amplifiers Based on the Developed Transistor Model (EEHEMT)

2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) ◽

10.1109/eiconrus.2019.8657314 ◽

2019 ◽

Cited By ~ 1

Author(s):

Myo Min Thant ◽

Vitaly A. Romanjuk ◽

Lwin Moe Khaing ◽

Naing Htun Lin ◽

Nikolai V. Guminov

Keyword(s):

Power Amplifiers ◽

High Frequency ◽

High Efficiency ◽

Gan Hemt ◽

Transistor Model

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A High Performance Isolated High Frequency Converter Based on GaN HEMT

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734670 ◽

2018 ◽

Author(s):

Yueshi Guan ◽

Xihong Hu ◽

Yijie Wang ◽

Wei Wang ◽

Dianguo Xu

Keyword(s):

High Frequency ◽

High Performance ◽

Frequency Converter ◽

Gan Hemt

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EXTRACTION OF GATE CAPACITANCE OF HIGH-FREQUENCY AND HIGH-POWER GaN HEMTs BY MEANS OF CELLULAR MONTE CARLO SIMULATIONS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156411006714 ◽

2011 ◽

Vol 20 (03) ◽

pp. 423-430

Author(s):

DIEGO GUERRA ◽

FABIO ALESSIO MARINO ◽

STEPHEN GOODNICK ◽

DAVID FERRY ◽

MARCO SARANITI

Keyword(s):

Monte Carlo ◽

High Power ◽

High Frequency ◽

Small Signal ◽

Small Signal Analysis ◽

Gan Hemt ◽

Full Band ◽

Cellular Monte Carlo ◽

Dc Characterization

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as Cg, Cgd, and Cgs, were directly and indirectly extracted combining small-signal analysis and DC characterization.

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