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UNSTRAINED InAlN/GaN HEMT STRUCTURE
High Performance Devices - Proceedings of the 2004 IEEE Lester Eastman Conference
◽
10.1142/9789812702036_0026
◽
2005
◽
Author(s):
M. NEUBURGER
◽
T. ZIMMERMANN
◽
E. KOHN
◽
A. DADGAR
◽
F. SCHULZE
◽
...
Keyword(s):
Gan Hemt
◽
Hemt Structure
Download Full-text
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Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction
Japanese Journal of Applied Physics
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10.35848/1347-4065/abe7c0
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Electrochemical Reaction
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Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0 0 0 1) sapphire
Superlattices and Microstructures
◽
10.1016/j.spmi.2009.09.008
◽
2009
◽
Vol 46
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pp. 812-816
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Gan Hemt
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Hemt Structure
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Effects of AlGaN∕GaN HEMT structure on RF reliability
Electronics Letters
◽
10.1049/el:20057802
◽
2005
◽
Vol 41
(3)
◽
pp. 155
◽
Cited By ~ 48
Author(s):
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◽
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◽
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◽
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Keyword(s):
Gan Hemt
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Hemt Structure
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Numerical Device Model for Reliable AlGaN/GaN HEMT Structure Design Based on Shear Stress
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
◽
10.1109/csics.2013.6659242
◽
2013
◽
Cited By ~ 1
Author(s):
Mayumi Hirose
◽
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◽
Kazutaka Takagi
◽
Kunio Tsuda
Keyword(s):
Shear Stress
◽
Structure Design
◽
Gan Hemt
◽
Device Model
◽
Hemt Structure
◽
Numerical Device
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An analysis of the increase in sheet resistance with the lapse of time of Al0.3Ga0.7N/GaN HEMT structure wafers
physica status solidi (c)
◽
10.1002/pssc.200674738
◽
2007
◽
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Keyword(s):
Sheet Resistance
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Gan Hemt
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Hemt Structure
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Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation
10.7567/ssdm.2012.f-7-4
◽
2012
◽
Author(s):
T. Oishi
◽
K. Hayashi
◽
Y. Yamaguchi
◽
H. Otsuka
◽
K. Yamanaka
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...
Keyword(s):
Leakage Current
◽
Reverse Bias
◽
Gate Leakage Current
◽
Gate Leakage
◽
Mechanism Study
◽
Gan Hemt
◽
Hemt Structure
◽
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◽
High Reverse Bias
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A new field-plated GaN HEMT structure with improved power and noise performance
Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004.
◽
10.1109/lechpd.2004.1549692
◽
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◽
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Hongtao Xu
◽
C. Sanabria
◽
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◽
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◽
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Noise Performance
◽
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Hemt Structure
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Non-destructive determination of ultra-thin GaN cap layer thickness in AlGaN/GaN HEMT structure by angle resolved x-ray photoelectron spectroscopy (ARXPS)
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◽
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◽
2018
◽
Vol 8
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◽
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◽
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Author(s):
Anshu Goyal
◽
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◽
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◽
Ashok K. Kapoor
Keyword(s):
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◽
Photoelectron Spectroscopy
◽
X Ray
◽
Gan Hemt
◽
Cap Layer
◽
Hemt Structure
◽
Non Destructive
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A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure
RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE Radio Frequency integrated Circuits
◽
10.1109/rfic.2005.1489819
◽
2005
◽
Author(s):
Chun San Chu
◽
Yugang Zhou
◽
K.J. Chen
◽
Kei May Lau
Keyword(s):
High Q
◽
Gan Hemt
◽
Metal Semiconductor Metal
◽
Hemt Structure
◽
Double Channel
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Low Temperature Epitaxy grown AlN Metal-Insulator-Semiconductor Diodes on AlGaN/GaN HEMT structure
2019 Electron Devices Technology and Manufacturing Conference (EDTM)
◽
10.1109/edtm.2019.8731261
◽
2019
◽
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Author(s):
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◽
G. I. Ng
◽
S. Arulkumaran
◽
K. Ranjan
◽
Y. Dikme
Keyword(s):
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◽
Metal Insulator
◽
Metal Insulator Semiconductor
◽
Gan Hemt
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Hemt Structure
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Low Temperature Epitaxy
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