Solution-Processed Zinc Oxide Thin-Film Transistors With a Low-Temperature Polymer Passivation Layer

2012 ◽  
Vol 33 (10) ◽  
pp. 1420-1422 ◽  
Author(s):  
Xiaoli Xu ◽  
Linrun Feng ◽  
Shasha He ◽  
Yizheng Jin ◽  
Xiaojun Guo
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Passivation Layer ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Solution Processed

Effect of Li-doping on low temperature solution-processed indium–zinc oxide thin film transistors

2017 ◽  
Vol 641 ◽  
pp. 19-23 ◽  
Author(s):  
Soo-Yeun Han ◽  
Manh-Cuong Nguyen ◽  
An Hoang Thuy Nguyen ◽  
Jae- Won Choi ◽  
Jung-Youn Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Solution Processed ◽  
Li Doping ◽  
Indium Zinc Oxide ◽  
Temperature Solution

scholarly journals Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors

RSC Advances ◽  
2015 ◽  
Vol 5 (45) ◽  
pp. 36083-36087 ◽  
Author(s):  
Yesul Jeong ◽  
Christopher Pearson ◽  
Hyun-Gwan Kim ◽  
Man-Young Park ◽  
Hongdoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Solution Processed

A ZnO transistor with carrier mobility of 3 cm2 V−1 s−1 using a SiO2 insulator formed at low-temperature (180 °C) from solution-processed perhydropolysilazane.

scholarly journals Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature

2018 ◽  
Vol 6 (38) ◽  
pp. 10376-10376
Author(s):  
Hyukjoon Yoo ◽  
Young Jun Tak ◽  
Won-Gi Kim ◽  
Yeong-gyu Kim ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Passivation Layer ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Correction for ‘A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature’ by Hyukjoon Yoo et al., J. Mater. Chem. C, 2018, 6, 6187–6193.

scholarly journals Zinc Oxide Thin-Film Transistors Fabricated at Low Temperature by Chemical Spray Pyrolysis

2014 ◽  
Vol 43 (11) ◽  
pp. 4241-4245 ◽  
Author(s):  
Yesul Jeong ◽  
Christopher Pearson ◽  
Yong Uk Lee ◽  
Lee Winchester ◽  
Jaeeun Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Spray Pyrolysis ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Chemical Spray Pyrolysis ◽  
Zinc Oxide Thin Film ◽  
Chemical Spray
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