Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature

Correction for ‘A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature’ by Hyukjoon Yoo et al., J. Mater. Chem. C, 2018, 6, 6187–6193.

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Low-temperature fabrication of an HfO2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process

Scientific Reports ◽

10.1038/s41598-017-16585-x ◽

2017 ◽

Vol 7 (1) ◽

Cited By ~ 21

Author(s):

Seonghwan Hong ◽

Sung Pyo Park ◽

Yeong-gyu Kim ◽

Byung Ha Kang ◽

Jae Won Na ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thin Film Transistors ◽

Solution Process ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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High-performance dual-layer channel indium gallium zinc oxide thin-film transistors fabricated in different oxygen contents at low temperature

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ef07 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EF07 ◽

Cited By ~ 15

Author(s):

Yu Tian ◽

Dedong Han ◽

Suoming Zhang ◽

Fuqing Huang ◽

Dongfang Shan ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer

ACS Applied Materials & Interfaces ◽

10.1021/acsami.7b00257 ◽

2017 ◽

Vol 9 (15) ◽

pp. 13278-13285 ◽

Cited By ~ 26

Author(s):

Kwan Yup Shin ◽

Young Jun Tak ◽

Won-Gi Kim ◽

Seonghwan Hong ◽

Hyun Jae Kim

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Electrical Characteristics ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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Low temperature characteristics in amorphous indium-gallium-zinc-oxide thin-film transistors down to 10 K

Applied Physics Letters ◽

10.1063/1.4824875 ◽

2013 ◽

Vol 103 (15) ◽

pp. 152103 ◽

Cited By ~ 19

Author(s):

Md Delwar Hossain Chowdhury ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Temperature Characteristics ◽

Indium Gallium

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Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Journal of Applied Physics ◽

10.1063/1.4904843 ◽

2014 ◽

Vol 116 (24) ◽

pp. 245302 ◽

Cited By ~ 5

Author(s):

Jae-sung Kim ◽

Byung Su Oh ◽

Mingxing Piao ◽

Min-Kyu Joo ◽

Ho-Kyun Jang ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Carrier Concentration ◽

Thin Film Transistors ◽

Trap Density ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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Effect of ${\hbox{SiO}}_{2}$ and/or ${\hbox{SiN}}_{x}$ Passivation Layer on Thermal Stability of Self-Aligned Coplanar Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors

Journal of Display Technology ◽

10.1109/jdt.2013.2244846 ◽

2013 ◽

Vol 9 (9) ◽

pp. 699-703 ◽

Cited By ~ 7

Author(s):

Dong Han Kang ◽

In Kang ◽

Sang Hyun Ryu ◽

Young Sik Ahn ◽

Jin Jang

Keyword(s):

Thin Film ◽

Thermal Stability ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

Thermal Stability Of

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Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c21611 ◽

2021 ◽

Vol 13 (7) ◽

pp. 8584-8594

Author(s):

Jiaona Zhang ◽

Weihong Huang ◽

Kuan-Chang Chang ◽

Yuhao Shi ◽

Changbin Zhao ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thin Film Transistors ◽

Performance Enhancement ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO[sub x] Passivation Layer

Electrochemical and Solid-State Letters ◽

10.1149/1.3168522 ◽

2009 ◽

Vol 12 (9) ◽

pp. H348 ◽

Cited By ~ 44

Author(s):

Hyun-Sik Seo ◽

Jong-Uk Bae ◽

Dae-Hwan Kim ◽

YuJin Park ◽

Chang-Dong Kim ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium ◽

Bottom Gate

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Novel Passivation Layer for Improvement of Reliability In Amorphous Indium Gallium Zinc Oxide Thin Film Transistors (TFTs)

10.7567/ssdm.2010.i-5-4 ◽

2010 ◽

Author(s):

S. H. Choi ◽

Y. W. Lee ◽

J. Y. Kwon ◽

M. K. Han

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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Effects of helium annealing in low-temperature and solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

AIP Advances ◽

10.1063/1.5092642 ◽

2019 ◽

Vol 9 (4) ◽

pp. 045228 ◽

Cited By ~ 1

Author(s):

Jeongmin Kim ◽

Ikjun Jang ◽

Jaewook Jeong

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Solution Processed ◽

Indium Gallium

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