Special issue on wide bandgap semiconductor power devices for energy efficiency and renewable energy utilization

2014 ◽  
Vol 35 (7) ◽  
pp. 804-804
2020 ◽  
pp. 014459872095251
Author(s):  
Yaolin Lin ◽  
Wei Yang ◽  
Xiaoli Hao ◽  
Changxiong Yu

About one-third of the primary energy in the world is consumed by buildings. A large amount of CO2 emission due to building energy consumption has threatened the sustainable development of the world. Improvement on the building energy performance, especially by integration with renewable energy resources has attracted interest worldwide to reduce greenhouse gas emission to make our society more sustainable. This Special Issue on building integrated renewable energy was open to all contributors in the field of building energy efficiency. The original experimental studies, numerical simulations, and reviews in all aspects of renewable energy utilization, management, and optimization have been considered. In the event, all these topics were covered in the extensive submissions accepted, but interesting papers on other aspects of building energy efficiency were also received. The purpose of this editorial is to summarize the main research findings of accepted papers in this Special Issue, including the use of renewable energy and energy saving technologies in buildings and identify a number of research questions and research directions.


Crystals ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 67
Author(s):  
Siva Pratap Reddy Mallem

This Special Issue on “Nano/Micro and Bio-Inspired Materials on Wide-Bandgap-Semiconductor-Based Optoelectronic/Power Devices” is a collection of 20 original articles dedicated to theoretical and experimental research works providing new insights and practical findings in the field of solid-state technology-related topics [...]


1997 ◽  
Vol 483 ◽  
Author(s):  
T. P. Chow ◽  
N. Ramungul ◽  
M. Ghezzo

AbstractThe present status of high-voltage power semiconductor switching devices is reviewed. The choice and design of device structures are presented. The simulated performance of the key devices in 4H-SiC is described. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for device commercialization are discussed.


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