Random Telegraph Noise-Induced Sensitivity of Data Retention to Cell Position in the Programmed Distribution of NAND Flash Memory Arrays

2015 ◽  
Vol 36 (7) ◽  
pp. 678-680 ◽  
Author(s):  
Davide Resnati ◽  
Christian Monzio Compagnoni ◽  
Giovanni M. Paolucci ◽  
Carmine Miccoli ◽  
Alessandro S. Spinelli ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Random Telegraph Noise ◽  
Cell Position ◽  
Telegraph Noise ◽  
Memory Arrays

Characterization of Random Telegraph Noise Generated by Process- and Cycling-Stress-Induced Traps in 26 nm NAND Flash Memory

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CA07 ◽  
Author(s):  
Bong-Su Jo ◽  
Ho-Jung Kang ◽  
Sung-Min Joe ◽  
Min-Kyu Jeong ◽  
Kyung-Rok Han ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Position-Dependent Threshold-Voltage Variation by Random Telegraph Noise in nand Flash Memory Strings

2010 ◽  
Vol 31 (7) ◽  
pp. 635-637 ◽  
Author(s):  
Sung-Min Joe ◽  
Jeong-Hyong Yi ◽  
Sung-Kye Park ◽  
Hyuck-In Kwon ◽  
Jong-Ho Lee
Keyword(s):  
Threshold Voltage ◽  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Random Telegraph Noise ◽  
Voltage Variation ◽  
Telegraph Noise

The Effect of Adjacent Bit-Line Cell Interference on Random Telegraph Noise in nand Flash Memory Cell Strings

2012 ◽  
Vol 59 (12) ◽  
pp. 3568-3573 ◽  
Author(s):  
Sung-Min Joe ◽  
Min-Kyu Jeong ◽  
Bong-Su Jo ◽  
Kyoung-Rok Han ◽  
Sung-Kye Park ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cell ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Flash Memory Cell
Sign in / Sign up

Export Citation Format

Share Document