Room-temperature continuous-wave operation of all-AlGaAs visible (∼700 nm) vertical-cavity surface emitting lasers fabricated by selective oxidation

Author(s):  
H.Q. Hou ◽  
M.H. Crawford ◽  
R.J. Hickman ◽  
B.E. Hammons
2012 ◽  
Vol 48 (9) ◽  
pp. 1107-1112 ◽  
Author(s):  
Toshikazu Onishi ◽  
Osamu Imafuji ◽  
Kentaro Nagamatsu ◽  
Masao Kawaguchi ◽  
Kazuhiko Yamanaka ◽  
...  

2010 ◽  
Vol 97 (7) ◽  
pp. 071114 ◽  
Author(s):  
Tien-Chang Lu ◽  
Shih-Wei Chen ◽  
Tzeng-Tsong Wu ◽  
Po-Min Tu ◽  
Chien-Kang Chen ◽  
...  

2000 ◽  
Vol 10 (01) ◽  
pp. 319-326
Author(s):  
Y. ZHOU ◽  
Y. XIONG ◽  
Y.-H. LO ◽  
C. JI ◽  
Z. H. ZHU ◽  
...  

By employing a reactive low temperature wafer bonding technique, we have demonstrated oxide-defined 850 nm vertical-cavity surface-emitting lasers (VCSEL's) on Si substrates. Devices reach a differential quantum efficiency of 53% and a light output power of 7.1 mW under room temperature and continuous-wave operation without a heat sink.


2014 ◽  
Vol 104 (25) ◽  
pp. 251116 ◽  
Author(s):  
Wen-Jie Liu ◽  
Xiao-Long Hu ◽  
Lei -Ying Ying ◽  
Jiang-Yong Zhang ◽  
Bao-Ping Zhang

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