A novel electro-optic sampling system by using delay-time tunable pulsed laser sources

Author(s):  
Gong-Ru Lin ◽  
Yung-Cheng Chang
1992 ◽  
Vol 285 ◽  
Author(s):  
D. K. Fork ◽  
G. B. Anderson

ABSTRACTThe pulsed laser deposition process is a powerful tool for investigating prototype epitaxial structures. This report outlines recent developments in epitaxial structures which may usefully serve as ferroelectric optical waveguides. Emphasis is given to structures on semiconductor substrates, motivated by hybrid optical/semiconductor integration. Earlier pulsed laser deposited structures, such as BaTiO3/MgO/GaAs (100) are discussed in conjunction with current results on Z-lithium niobate on GaAs (111)A and GaAs (111)B. BaTiO3/MgO/GaAs (100) grows with cube-on-cube crystallography. The epitaxial system z-lithium niobate on GaAs (111)A and GaAs (111)B has been demonstrated both with and without intermediate MgO (111) layers. The in-plane epitaxial relationships are LiNbO3 [110] // GaAs [211] and [211] indicating the existence of 180° boundaries in the LiNbO3 with and without the MgO layer, which grows cube-on-cube with the GaAs. Out-of-plane texture is typically 1.0° and 1.2° for the MgO and LiNbO3 layers respectively. In-plane texture is typically 2.8° and 4.5° for MgO and LiNbO3 layers respectively. These and similar epitaxial systems may be useful for monolithic electro-optic or frequency doubling applications in conjunction with semiconductor laser sources.


1993 ◽  
Vol 63 (16) ◽  
pp. 2198-2200 ◽  
Author(s):  
W. Jo ◽  
H‐J. Cho ◽  
T. W. Noh ◽  
B. I. Kim ◽  
D‐Y. Kim ◽  
...  
Keyword(s):  

2003 ◽  
Vol 82 (15) ◽  
pp. 2383-2385 ◽  
Author(s):  
X. Zheng ◽  
S. Wu ◽  
Roman Sobolewski ◽  
R. Adam ◽  
M. Mikulics ◽  
...  

2017 ◽  
Vol 43 (1) ◽  
pp. 22 ◽  
Author(s):  
Maximilian Hoffmann ◽  
Ioannis N. Papadopoulos ◽  
Benjamin Judkewitz

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