Structural and electro‐optic properties of pulsed laser deposited Bi4Ti3O12thin films on MgO

AbstractEpitaxial LiNbO3 films were grown on a-cut sapphire, i.e., α-A12O3(0112), substrates by pulsed laser deposition. It is found the oxygen pressure is an important deposition parameter to influence the orientations of the LiNbO3 films. At an oxygen pressure of 10−1 torr, LiNbO3(0001) film was grown epitaxially. And, at a low oxygen pressure (i.e., 5x10−4 torr), LiNbO3(1120) film was grown epitaxially. Due to the anisotropic electro-optic (EO) constants, these films with the different orientations display large differences in their EO properties: the epitaxial LiNb3(0001) film shows little EO effects, but the LiNbO3(1120) film shows a large quadratic EO behavior with an effective coefficient of 2.38×10−5 m2/V2. The dependence of EO effects on the orientations of the epitaxial films was analyzed in terms of the linear and quadratic EO tensors of LiNbO3.

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Ferroelectic BaTiO3 Thin Film Optical Waveguide Modulators

MRS Proceedings ◽

10.1557/proc-688-c8.1.1 ◽

2001 ◽

Vol 688 ◽

Cited By ~ 2

Author(s):

A. Petraru ◽

M. Siegert ◽

M. Schmid ◽

J. Schubert ◽

Ch. Buchal

Keyword(s):

Optical Waveguide ◽

Ion Beam ◽

Pulsed Laser ◽

Laser Deposition ◽

Epitaxial Thin Films ◽

Ion Beam Etching ◽

Waveguide Propagation ◽

Electro Optic ◽

Waveguide Modulators ◽

Batio3 Thin Film

AbstractHigh quality BaTiO3 epitaxial thin films on MgO substrates have been grown by pulsed laser deposition (PLD). Both c-axis and a-axis orientated BaTiO3 were studied. Mach-Zehnder (M-Z) optical waveguide modulators have been fabricated by ion beam etching. The BaTiO3 waveguide propagation losses are 1-2 dB/cm. Electro-optic modulation has been demonstrated with Vπ = 6.3 V at a wavelength of 633 nm and Vπ = 9.5 V at a wavelength of 1550 nm for the aaxis samples and with Vπ = 8 V at 633 nm wavelength and Vπ = 15 V at 1550 nm for the c-axis samples. Modelling of the modulators gave the Pockels coefficient r51 = 80 pm/V for the c-axis film and an effective Pockels coefficient reff =734pm/V for the a-axis films at 633nm wavelength.

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Laser Deposited Epitaxial Oxide Heterostructures as Prototype Ferroelectric Optical Waveguides

MRS Proceedings ◽

10.1557/proc-285-355 ◽

1992 ◽

Vol 285 ◽

Cited By ~ 5

Author(s):

D. K. Fork ◽

G. B. Anderson

Keyword(s):

Lithium Niobate ◽

Optical Waveguides ◽

Pulsed Laser ◽

Frequency Doubling ◽

Deposition Process ◽

Electro Optic ◽

Out Of Plane ◽

Recent Developments ◽

Laser Sources ◽

Epitaxial Oxide

ABSTRACTThe pulsed laser deposition process is a powerful tool for investigating prototype epitaxial structures. This report outlines recent developments in epitaxial structures which may usefully serve as ferroelectric optical waveguides. Emphasis is given to structures on semiconductor substrates, motivated by hybrid optical/semiconductor integration. Earlier pulsed laser deposited structures, such as BaTiO3/MgO/GaAs (100) are discussed in conjunction with current results on Z-lithium niobate on GaAs (111)A and GaAs (111)B. BaTiO3/MgO/GaAs (100) grows with cube-on-cube crystallography. The epitaxial system z-lithium niobate on GaAs (111)A and GaAs (111)B has been demonstrated both with and without intermediate MgO (111) layers. The in-plane epitaxial relationships are LiNbO3 [110] // GaAs [211] and [211] indicating the existence of 180° boundaries in the LiNbO3 with and without the MgO layer, which grows cube-on-cube with the GaAs. Out-of-plane texture is typically 1.0° and 1.2° for the MgO and LiNbO3 layers respectively. In-plane texture is typically 2.8° and 4.5° for MgO and LiNbO3 layers respectively. These and similar epitaxial systems may be useful for monolithic electro-optic or frequency doubling applications in conjunction with semiconductor laser sources.

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Electro-optic and dielectric properties of epitaxial Pb1−3x/2LaxZr0.2Ti0.8O3 thin films obtained by pulsed laser deposition

Thin Solid Films ◽

10.1016/j.tsf.2012.11.119 ◽

2013 ◽

Vol 541 ◽

pp. 127-130 ◽

Cited By ~ 3

Author(s):

N.D. Scarisoreanu ◽

F. Craciun ◽

A. Andrei ◽

V. Ion ◽

R. Birjega ◽

...

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Electro Optic

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Synthesis of LN/Si Nanostructures Layer by LayerBased on Mach-Zehnder Modulator using Pulsed Laser Deposition

10.21203/rs.3.rs-206042/v1 ◽

2021 ◽

Author(s):

Luma Z. Mohammed ◽

Makram A Fakhri ◽

A. K. Abass ◽

Evan T. Salim

Keyword(s):

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

X Rays ◽

X Ray Diffraction ◽

Low Loss ◽

Electro Optic ◽

Mach Zehnder Modulator ◽

Si Nanostructures ◽

Highly Uniform

Abstract A Mach-Zehnder electro-optic modulator (EOM) was fabricated employing pulsed laser deposition (PLD) method. Lithium Niobate (LN) was bonded to silicon nanocrystal substrate such that a waveguide combined structures were obtained. The over-all Properties of prepared device were investigated. The formation of LN was ensured by the x-ray diffraction results were the formation of ∆ phase was confirmed by the diffraction of x-rays from the (012) and (302) diffraction plans. The AFM results reflect the formation of highly uniform nanostructured with maximum roughness of about 12.9 nm. The constructed device shows that the recent improvements in hybrid MZ modulators using pulse laser deposition PLD and different electro-optic material have shown low loss and wide modulation bandwidth.

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Control of epitaxial growth of pulsed laser deposited LiNbO3 films and their electro‐optic effects

Applied Physics Letters ◽

10.1063/1.116417 ◽

1996 ◽

Vol 68 (4) ◽

pp. 472-474 ◽

Cited By ~ 37

Author(s):

See‐Hyung Lee ◽

T. W. Noh ◽

Jai‐Hyung Lee

Keyword(s):

Epitaxial Growth ◽

Pulsed Laser ◽

Electro Optic

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