Ultrafast all-optical switching using near-infrared intersubband transitions in quantum wells

2003 ◽  
Author(s):  
H. Yoshida ◽  
A.V. Gopal ◽  
T. Simoyama ◽  
T. Mozume ◽  
H. Ishikawa ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Near Infrared ◽  
Intersubband Transitions ◽  
All Optical ◽  
All Optical Switching

Ultrafast all-optical switching using intersubband transitions in InGaAs/AlAs/AlAsSb quantum wells

2008 ◽  
Author(s):  
H. Ishikawa ◽  
R. Akimoto ◽  
G. W. Cong ◽  
M. Nagase ◽  
T. Mozume ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Intersubband Transitions ◽  
All Optical ◽  
All Optical Switching

Three Operation Modes for Tb/s All-Optical Switching With Intersubband Transitions in InGaAs/AlAs/AlAsSb Quantum Wells

2012 ◽  
Vol 48 (7) ◽  
pp. 885-890 ◽  
Author(s):  
Yuriy Fedoryshyn ◽  
Ping Ma ◽  
Jérôme Faist ◽  
Peter Kaspar ◽  
Roman Kappeler ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Intersubband Transitions ◽  
Operation Modes ◽  
All Optical ◽  
All Optical Switching

scholarly journals Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides

2007 ◽  
Vol 15 (26) ◽  
pp. 17922 ◽  
Author(s):  
Yan Li ◽  
Anirban Bhattacharyya ◽  
Christos Thomidis ◽  
Theodore D. Moustakas ◽  
Roberto Paiella
Keyword(s):  
Quantum Well ◽  
Optical Switching ◽  
Intersubband Transitions ◽  
All Optical ◽  
All Optical Switching

scholarly journals Ultrafast sub–30-fs all-optical switching based on gallium phosphide

2019 ◽  
Vol 5 (6) ◽  
pp. eaaw3262 ◽  
Author(s):  
Gustavo Grinblat ◽  
Michael P. Nielsen ◽  
Paul Dichtl ◽  
Yi Li ◽  
Rupert F. Oulton ◽  
...  
Keyword(s):  
Gallium Phosphide ◽  
Optical Switching ◽  
Near Infrared ◽  
Optical Nonlinearity ◽  
Photon Absorption ◽  
Linear Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
All Optical ◽  
All Optical Switching

Gallium phosphide (GaP) is one of the few available materials with strong optical nonlinearity and negligible losses in the visible (λ > 450 nm) and near-infrared regime. In this work, we demonstrate that a GaP film can generate sub–30-fs (full width at half maximum) transmission modulation of up to ~70% in the 600- to 1000-nm wavelength range. Nonlinear simulations using parameters measured by theZ-scan approach indicate that the transmission modulation arises from the optical Kerr effect and two-photon absorption. Because of the absence of linear absorption, no slower free-carrier contribution is detected. These findings place GaP as a promising ultrafast material for all-optical switching at modulation speeds of up to 20 THz.

1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells

2002 ◽  
Vol 14 (4) ◽  
pp. 495-497 ◽  
Author(s):  
T. Akiyama ◽  
N. Georgiev ◽  
T. Mozume ◽  
H. Yoshida ◽  
A.V. Gopal ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Coupled Quantum Wells ◽  
Intersubband Absorption ◽  
All Optical ◽  
All Optical Switching
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