Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $\mu$m
2008 ◽
Vol 20
(16)
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pp. 1366-1368
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Keyword(s):
Si Doped
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2007 ◽
Vol 38
(3)
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pp. 447-451
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Keyword(s):
2014 ◽
Vol 617
◽
pp. 141-144
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2009 ◽
Vol 78
(10)
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pp. 104707
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1989 ◽
Vol 70
(6)
◽
pp. 535-537
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