An Oblique Incidence Ion Implanted MSFVW RAF with Linear Group Delay

2005 ◽  
Author(s):  
K.W. Reed ◽  
J.M. Owens ◽  
R.L. Carter ◽  
C.V. Smith
Keyword(s):  
Linear Group ◽  
Oblique Incidence ◽  
Group Delay ◽  
Ion Implanted

Design of integrated all‐pass filters with linear group delay for analog signal processing applications

2020 ◽  
Vol 48 (5) ◽  
pp. 658-673 ◽  
Author(s):  
João Alberto França Ferreira ◽  
Emilie Avignon‐Meseldzija ◽  
Pietro Maris Ferreira ◽  
Julien Sarrazin ◽  
Philippe Bénabès
Keyword(s):  
Signal Processing ◽  
Linear Group ◽  
Group Delay ◽  
Analog Signal Processing ◽  
Analog Signal

Ion Implanted Oblique Incidence Magnetostatic Waves

2005 ◽  
Author(s):  
R.L. Carter ◽  
J.M. Owens ◽  
C.V. Smith ◽  
K.W. Reed
Keyword(s):  
Oblique Incidence ◽  
Magnetostatic Waves ◽  
Ion Implanted

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

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