A fully encapsulated waveguide coupled passive imaging W-band radiometer module with RF frontend IC in a SiGe-BiCMOS technology

2016 ◽  
Author(s):  
Andreas Strodl ◽  
Alina C. Bunea ◽  
Vaclav Valenta ◽  
Rolf Johnsson ◽  
Shakila B. Reyaz ◽  
...  
Keyword(s):  
Passive Imaging ◽  
W Band ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Band Radiometer

scholarly journals Low-Noise Amplifiers for W-Band and D-Band Passive Imaging Systems in SiGe BiCMOS Technology

2018 ◽  
Author(s):  
Berktug Ustundag ◽  
Esref Turkmen ◽  
Barbaros Cetindogan ◽  
Alper Guner ◽  
Mehmet Kaynak ◽  
...  
Keyword(s):  
Low Noise ◽  
Imaging Systems ◽  
Low Noise Amplifiers ◽  
Passive Imaging ◽  
W Band ◽  
Bicmos Technology ◽  
Sige Bicmos

scholarly journals W-band voltage-controlled oscillator design in 130 nm SiGe BiCMOS technology

2019 ◽  
Vol 30 ◽  
pp. 01006
Author(s):  
Alexander Kozhemyakin ◽  
Ivan Kravchenko
Keyword(s):  
Power Consumption ◽  
Output Power ◽  
Design Flow ◽  
Voltage Controlled Oscillator ◽  
Automotive Radar ◽  
W Band ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Fundamental Oscillation ◽  
Simulation Results

The paper presents design flow and simulation results of the W-band fundamental voltage-controlled oscillator in 0.13 μm SiGe BiCMOS technology for an automotive radar application. Oscillator provides fundamental oscillation range of 76.8 GHz to 81.2 GHz. According to simulation results phase noise is –89.3 dBc/Hz at 1 MHz offset, output power is –5.6 dBm and power consumption is 39 mW from 3.3 V source.

80-GHz-band low-power sub-harmonic mixer IC with a bottom-LO-configuration in 130-nm SiGe BiCMOS

2016 ◽  
Vol 8 (4-5) ◽  
pp. 703-712
Author(s):  
Xin Yang ◽  
Xiao Xu ◽  
Takayuki Shibata ◽  
Toshihiko Yoshimasu
Keyword(s):  
Supply Voltage ◽  
Current Source ◽  
Conversion Gain ◽  
Power Requirement ◽  
Harmonic Mixer ◽  
W Band ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
On Chip ◽  
Marchand Balun

In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only −7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.

A W-band direct-conversion I-Q mixer in 0.13μm SiGe BiCMOS technology

2016 ◽  
Author(s):  
Wei Liu ◽  
Haitao Liu ◽  
Ruitao Wang ◽  
Yihu Li ◽  
Xu Cheng ◽  
...  
Keyword(s):  
Direct Conversion ◽  
W Band ◽  
Bicmos Technology ◽  
Sige Bicmos

Front-End Blocks of a W-Band Dicke Radiometer in SiGe BiCMOS Technology

2020 ◽  
Vol 67 (11) ◽  
pp. 2417-2421 ◽  
Author(s):  
Berktug Ustundag ◽  
Esref Turkmen ◽  
Abdurrahman Burak ◽  
Berke Gungor ◽  
Hamza Kandis ◽  
...  
Keyword(s):  
Front End ◽  
W Band ◽  
Bicmos Technology ◽  
Sige Bicmos
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