High performance from ZnO multiple quantum-well green light emitting diode with Li-doped CdZnO active region

2012 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Shruti Verma ◽  
Saurabh Kumar Pandey ◽  
Shaibal Mukherjee
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
High Performance ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Green Light ◽  
Multiple Quantum ◽  
Light Emitting

Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy

2002 ◽  
Vol 80 (12) ◽  
pp. 2198-2200 ◽  
Author(s):  
F. B. Naranjo ◽  
S. Fernández ◽  
M. A. Sánchez-Garcı́a ◽  
F. Calle ◽  
E. Calleja
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Resonant Cavity ◽  
Multiple Quantum Well ◽  
Green Light ◽  
Multiple Quantum ◽  
Light Emitting

280 nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region

2009 ◽  
Vol 2 (10) ◽  
pp. 102101 ◽  
Author(s):  
Vinod Adivarahan ◽  
Ahmad Heidari ◽  
Bin Zhang ◽  
Qhalid Fareed ◽  
Seongmo Hwang ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Deep Ultraviolet

scholarly journals III-Nitride Multi-Quantum-Well Light Emitting Structures with Selective Carrier Injection

2019 ◽  
Vol 9 (18) ◽  
pp. 3872
Author(s):  
Hussein S. El-Ghoroury ◽  
Mikhail V. Kisin ◽  
Chih-Li Chuang
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Quantum Wells ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Carrier Injection ◽  
Light Emitting ◽  
Efficient Control ◽  
Multi Quantum Well

Incorporation into the multi-layered active region of a semiconductor light-emitting structure specially designed intermediate carrier blocking layers (IBLs) allows efficient control over the carrier injection distribution across the structure’s active region to match the application-driven device injection characteristics. This approach has been successfully applied to control the color characteristics of monolithic multi-color light-emitting diodes (LEDs). We further exemplify the method’s versatility by demonstrating the IBL design of III-nitride multiple-quantum-well (MQW) light-emitting diode with active quantum wells uniformly populated at LED operational current.

Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures with Indium-Rich Clusters

2018 ◽  
Vol 215 (23) ◽  
pp. 1800455 ◽  
Author(s):  
Yulin Meng ◽  
Lianshan Wang ◽  
Guijuan Zhao ◽  
Fangzheng Li ◽  
Huijie Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Red Emission ◽  
Light Emitting
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