III-Nitride Multi-Quantum-Well Light Emitting Structures with Selective Carrier Injection
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Incorporation into the multi-layered active region of a semiconductor light-emitting structure specially designed intermediate carrier blocking layers (IBLs) allows efficient control over the carrier injection distribution across the structure’s active region to match the application-driven device injection characteristics. This approach has been successfully applied to control the color characteristics of monolithic multi-color light-emitting diodes (LEDs). We further exemplify the method’s versatility by demonstrating the IBL design of III-nitride multiple-quantum-well (MQW) light-emitting diode with active quantum wells uniformly populated at LED operational current.
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2010 ◽
Vol 56
(4(1))
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pp. 1256-1260
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2018 ◽
Vol 215
(23)
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pp. 1800455
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2008 ◽
Vol 20
(23)
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pp. 1923-1925
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2012 ◽
Vol 24
(11)
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pp. 909-911
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