Effect of band nonparabolicity and material composition on intersubband transition energies of a heterostructure quantum ring for optical transmitter

Author(s):  
S. Bhattacharyya ◽  
Arpan Deyasi ◽  
N. R. Das
1998 ◽  
Vol 72 (6) ◽  
pp. 719-721 ◽  
Author(s):  
R. Sasagawa ◽  
H. Sugawara ◽  
Y. Ohno ◽  
H. Nakajima ◽  
S. Tsujino ◽  
...  

2017 ◽  
Vol 103 ◽  
pp. 151-160 ◽  
Author(s):  
L.F. García ◽  
S.Yu. Revinova ◽  
I.D. Mikhailov

1987 ◽  
Vol 32 (6) ◽  
pp. 655-661 ◽  
Author(s):  
V. M. S. Gomes ◽  
G. M. G. Oliveira ◽  
J. R. Leite ◽  
A. S. Chaves

2007 ◽  
Vol 31 ◽  
pp. 105-107 ◽  
Author(s):  
D.S. Li ◽  
W.J. Fan ◽  
Y.X. Dang ◽  
B.S. Ma ◽  
D.H. Zhang ◽  
...  

We report the design, characterization and fabrication of GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) to achieve intersubband transitions at expected long wavelengths. With eight-band k·p model, we calculated the E2-E1 transition energies of GaAs/Al0.25Ga0.75As QWs with the different well widths. According to the calculation, we designed a QWIP with the estimated detection wavelength around 9 μm. The actual device structure parameters, such as well width and Al composition, were confirmed by the XRD measurements. The absorption peak at 9.46 μm and the peak responsivity at 8.7 μm are obtained, which are very close to the simulation results.


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