An improved compact model of the electrical behaviour of the 5-contact vertical hall-effect device

2013 ◽  
Author(s):  
Morgan Madec ◽  
Jean-Baptiste Schell ◽  
Jean-Baptiste Kammerer ◽  
Christophe Lallement ◽  
Luc Hebrard
Keyword(s):  
Hall Effect ◽  
Compact Model ◽  
Electrical Behaviour

An improved compact model of the electrical behaviour of the 5-contact vertical Hall-effect device

2014 ◽  
Vol 81 (3) ◽  
pp. 677-691 ◽  
Author(s):  
Morgan Madec ◽  
Jean-Baptiste Schell ◽  
Jean-Baptiste Kammerer ◽  
Christophe Lallement ◽  
Luc Hébrard
Keyword(s):  
Hall Effect ◽  
Compact Model ◽  
Electrical Behaviour

Carrier and Atomic Distributions in Si Implanted and Rapid Thermally Annealed InP ; Influence of Dual Implants of As or P

1987 ◽  
Vol 92 ◽  
Author(s):  
Nicole DUIIAMEL ◽  
Brigitte DESCOUTS ◽  
Philippe KRAUZ ◽  
Krishna RAO ◽  
Jean DANGLA ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electrical Activity ◽  
Hall Effect ◽  
Electrical Behaviour ◽  
Rapid Thermal Anneal ◽  
Specific Contact ◽  
Good Contact ◽  
Specific Contact Resistivity ◽  
Crystallographic Disorder ◽  
Inp Substrates

ABSTRACTRapid thermal anneal (R.T.A.) by halogen lamps has been carried out to activate Si29 implants in semi-insulating InP substrates with the aim of realizing good contact areas at low depth (0.1 μm). To better understand the electrical behaviour of Si observed in these conditions, and to try to increase the electrical activity we performed dual implantations (As + Si or P + Si). The crystallographic disorder remaining after anneal and its influence on the electrical properties are discussed. The uniformity of activation has been evaluated by Hall effect and specific contact resistivity cartographies both for mono-implantations and for dual implantations.

An improved compact model for CMOS cross-shaped Hall-effect sensor including offset and temperature effects

2012 ◽  
Vol 73 (3) ◽  
pp. 719-730 ◽  
Author(s):  
Morgan Madec ◽  
Jean-Baptiste Kammerer ◽  
Luc Hébrard ◽  
Christophe Lallement
Keyword(s):  
Hall Effect ◽  
Temperature Effects ◽  
Compact Model ◽  
Hall Effect Sensor

An accurate compact model for CMOS cross-shaped Hall effect sensors

2011 ◽  
Vol 171 (2) ◽  
pp. 69-78 ◽  
Author(s):  
M. Madec ◽  
J.B. Kammerer ◽  
L. Hébrard ◽  
C. Lallement
Keyword(s):  
Hall Effect ◽  
Compact Model ◽  
Hall Effect Sensors

HALL EFFECT IN SILVER - RARE EARTH AMORPHOUS ALLOYS

1980 ◽  
Vol 41 (C8) ◽  
pp. C8-467-C8-469 ◽  
Author(s):  
R. Asomoza ◽  
J. B. Bieri ◽  
A. Fert ◽  
B. Boucher ◽  
J. C. Ousset
Keyword(s):  
Rare Earth ◽  
Hall Effect ◽  
Amorphous Alloys

The Hall effect and its analogs

2015 ◽  
Vol 185 (5) ◽  
pp. 479-488 ◽  
Author(s):  
Aleksandr F. Barabanov ◽  
Yurii M. Kagan ◽  
Leonid A. Maksimov ◽  
Andrey V. Mikheyenkov ◽  
Tatyana V. Khabarova
Keyword(s):  
Hall Effect
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