A GaN HEMT power amplifier with variable gate bias for envelope and phase signals

Norchip 2007 ◽

10.1109/norchp.2007.4481050 ◽

2007 ◽

Author(s):

Ellie Cijvat ◽

Kevin Tom ◽

Mike Faulkner ◽

Henrik Sjoland

Keyword(s):

Power Amplifier ◽

Gate Bias ◽

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Investiogation of linearity improvement with dynamic gate bias technique for flat gain or phase of an 10 W GaN HEMT power amplifier

2016 IEEE/ACES International Conference on Wireless Information Technology and Systems (ICWITS) and Applied Computational Electromagnetics (ACES) ◽

10.1109/ropaces.2016.7465391 ◽

2016 ◽

Author(s):

Dragan Gecan ◽

Morten Olavsbraten ◽

Karl M. Gjertsen

Keyword(s):

Power Amplifier ◽

Gate Bias ◽

Gan Hemt ◽

Linearity Improvement ◽

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A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier

IEICE Transactions on Electronics ◽

10.1587/transele.e94.c.1193 ◽

2011 ◽

Vol E94-C (7) ◽

pp. 1193-1198 ◽

Author(s):

Akihiro ANDO ◽

Yoichiro TAKAYAMA ◽

Tsuyoshi YOSHIDA ◽

Ryo ISHIKAWA ◽

Kazuhiko HONJO

Keyword(s):

Power Amplifier ◽

Average Power ◽

Gan Hemt ◽

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A High Efficiency 4–18 GHz GaN MMIC Power Amplifier based on 90nm T-gate GaN HEMT Technology

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts48439.2020.9392935 ◽

2020 ◽

Author(s):

Shuoqi Chen ◽

Vipan Kumar ◽

Yu Cao

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

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A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ◽

10.1109/csics.2012.6340065 ◽

2012 ◽

Author(s):

Valiallah Zomorrodian ◽

Umesh K. Mishra ◽

Robert A. York

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Gan Hemt ◽

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Single and dual input packaged 5.5–6.5GHz, 20W, Quasi-MMIC GaN-HEMT Doherty Power Amplifier

2017 IEEE MTT-S International Microwave Symposium (IMS) ◽

10.1109/mwsym.2017.8058804 ◽

2017 ◽

Author(s):

Mohammed Ayad ◽

Estelle Byk ◽

Guillaume Neveux ◽

Marc Camiade ◽

Denis Barataud

Keyword(s):

Power Amplifier ◽

Gan Hemt ◽

Doherty Power Amplifier

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A Cool, Sub-0.2 dB Noise Figure GaN HEMT Power Amplifier With 2-Watt Output Power

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.2009.2026842 ◽

2009 ◽

Vol 44 (10) ◽

pp. 2648-2654 ◽

Author(s):

Kevin W. Kobayashi ◽

YaoChung Chen ◽

Ioulia Smorchkova ◽

Benjamin Heying ◽

Wen-Ben Luo ◽

...

Keyword(s):

Output Power ◽

Power Amplifier ◽

Noise Figure ◽

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Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) ◽

10.1109/mwsym.2004.1338904 ◽

2004 ◽

Author(s):

R. Behtash ◽

H. Tobler ◽

F.-J. Berlec ◽

V. Ziegler ◽

H. Leier ◽

...

Keyword(s):

Power Amplifier ◽

Gan Hemt ◽

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Adaptive Gate Bias for Power Amplifier Temperature Compensation

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2011.2160264 ◽

2011 ◽

Vol 11 (3) ◽

pp. 442-449 ◽

Author(s):

Shuyu Chen ◽

Jiann-Shiun Yuan

Keyword(s):

Power Amplifier ◽

Temperature Compensation ◽

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A wideband GaN HEMT power amplifier based on the dual-fed distributed structure for WiMAX applications

Microwave and Optical Technology Letters ◽

10.1002/mop.24090 ◽

2008 ◽

Vol 51 (2) ◽

pp. 574-577 ◽

Author(s):

Yong-Sub Lee ◽

Mun-Woo Lee ◽

Yoon-Ha Jeong

Keyword(s):

Power Amplifier ◽

Distributed Structure ◽

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A 20 W GaN HEMT VHF/UHF Class-D power amplifier

WAMICON 2011 Conference Proceedings ◽

10.1109/wamicon.2011.5872897 ◽

2011 ◽

Author(s):

Song Lin ◽

Aly E Fathy

Keyword(s):

Power Amplifier ◽

Gan Hemt ◽

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