scholarly journals Electron acceleration in relativistic plasma waves generated by a single frequency short-pulse laser

2002 ◽  
Author(s):  
C.A. Coverdale ◽  
C.B. Darrow ◽  
C.D. Decker ◽  
W.B. Mori ◽  
K.-C. Tzeng ◽  
...  
Keyword(s):  
Pulse Laser ◽  
Short Pulse ◽  
Electron Acceleration ◽  
Plasma Waves ◽  
Relativistic Plasma ◽  
Single Frequency ◽  
Short Pulse Laser

scholarly journals Electron acceleration by an intense short-pulse laser in underdense plasma

2003 ◽  
Vol 10 (6) ◽  
pp. 2468-2474 ◽  
Author(s):  
M. Y. Yu ◽  
Wei Yu ◽  
Z. Y. Chen ◽  
J. Zhang ◽  
Y. Yin ◽  
...  
Keyword(s):  
Pulse Laser ◽  
Short Pulse ◽  
Electron Acceleration ◽  
Short Pulse Laser ◽  
Underdense Plasma

Electron acceleration by the short pulse laser in inhomogeneous underdense plasmas

2004 ◽  
Vol 70 (5) ◽  
pp. 625-634 ◽  
Author(s):  
LIHUA CAO ◽  
WEI YU ◽  
HAN XU ◽  
CHUNYANG ZHENG ◽  
ZHANJUN LIU ◽  
...  
Keyword(s):  
Pulse Laser ◽  
Short Pulse ◽  
Electron Acceleration ◽  
Short Pulse Laser ◽  
Underdense Plasmas

Silicon Thinning using Ultra-Short Pulse Laser Ablation

2004 ◽  
Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Sample Preparation ◽  
Pulse Laser ◽  
Pulse Laser Ablation ◽  
Short Pulse ◽  
Special Care ◽  
Short Pulse Laser ◽  
Ultra Short Pulse ◽  
Ultra Short Pulse Laser

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.

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