Thermal treatment of InGaAs/GaAs self-assembled quantum dots with PECVD-grown SiO/sub 2/ capping layer

2003 ◽  
Author(s):  
S.H. Hwang ◽  
J.C. Shin ◽  
W.J. Choi ◽  
Y.M. Park ◽  
J.D. Song ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Thermal Treatment ◽  
Capping Layer ◽  
Self Assembled

Post-growth thermal treatment of self-assembled InAs/GaAs quantum dots

2002 ◽  
Vol 412 (1-2) ◽  
pp. 84-88 ◽  
Author(s):  
Adam Babinski ◽  
J Jasinski
Keyword(s):  
Quantum Dots ◽  
Thermal Treatment ◽  
Self Assembled

The influence of a capping layer on optical properties of self-assembled InGaN quantum dots

2007 ◽  
Vol 101 (11) ◽  
pp. 113520-113520 ◽  
Author(s):  
Q. Wang ◽  
T. Wang ◽  
P. J. Parbrook ◽  
J. Bai ◽  
A. G. Cullis
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Capping Layer ◽  
Self Assembled

Effects of Rapid Thermal Annealing on the Intersubband Energy Spacing of Self-Assembled InAs/Gaas Quantum Dots

1999 ◽  
Vol 588 ◽  
Author(s):  
X. C. Wang ◽  
S. J. Chua ◽  
S. J. Xu ◽  
Z. H. Zhang
Keyword(s):  
Quantum Dots ◽  
Excited State ◽  
High Resolution ◽  
Thermal Treatment ◽  
Ground State ◽  
Infrared Detectors ◽  
Blue Shift ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Assembled

AbstractIn this paper, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescence linewidth of the ground state and excited state emissions from the InAs dot layers for the annealed samples indicates an improvement of the size-distribution of the QDs. Large blue-shift of the energy positions of both emissions was also observed. High resolution X-Ray diffraction experiments give strong evidence of the interface atom interdiffusion in the annealed samples. This work shows ability to tune the wavelength for applications like infrared detectors and lasers based on intrasubband transitions of self-assembled QDs.

Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition

2014 ◽  
Vol 25 (30) ◽  
pp. 305703 ◽  
Author(s):  
Je-Hyung Kim ◽  
Donia Elmaghraoui ◽  
Mathieu Leroux ◽  
Maxim Korytov ◽  
Philippe Vennéguès ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atmospheric Condition ◽  
Capping Layer ◽  
Self Assembled

Rapid preparation of self-assembled CdTe quantum dots used for sensing of DNA in urine

2018 ◽  
Vol 42 (8) ◽  
pp. 6005-6012 ◽  
Author(s):  
Lukas Nejdl ◽  
Jaroslava Zelnickova ◽  
Tereza Vaneckova ◽  
David Hynek ◽  
Vojtech Adam ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Thermal Treatment ◽  
Systematic Study ◽  
Self Assembly ◽  
The Self ◽  
Cdte Quantum Dots ◽  
Rapid Preparation ◽  
Laboratory Temperature ◽  
Mercaptosuccinic Acid ◽  
Self Assembled

In this article, the authors report a systematic study of the self-assembly of CdTe quantum dots (QDs) stabilized by mercaptosuccinic acid (MSA) at laboratory temperature (25 °C) or after thermal treatment (90 °C).

Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs

2009 ◽  
Vol 46 (1-2) ◽  
pp. 324-327 ◽  
Author(s):  
P. Hazdra ◽  
J. Oswald ◽  
V. Komarnitskyy ◽  
K. Kuldová ◽  
A. Hospodková ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Layer Thickness ◽  
Electronic States ◽  
Inas Quantum Dots ◽  
Capping Layer ◽  
Self Assembled
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