The determination of the electron beam energy in DM1 with far field X-ray measurements

Author(s):  
J.E. Rauch ◽  
J.R. Thompson
2001 ◽  
Vol 79 (2-3) ◽  
pp. 153-162 ◽  
Author(s):  
E Träbert ◽  
P Beiersdorfer ◽  
K B Fournier ◽  
S B Utter ◽  
K L Wong

Systematic variation of the electron-beam energy in an electron-beam ion trap has been employed to produce soft-X-ray spectra (20 to 60 Å) of Au with well-defined maximum charge states ranging from Br- to Co-like ions. Guided by large-scale relativistic atomic structure calculations, the strongest Δn = 0 (n = 4 to n' = 4) transitions in Rb- to Cu-like ions (Au42+ – Au50+) have been identified. PACS Nos.: 32.30Rj, 39.30+w, 31.50+w, 32.20R


2007 ◽  
Vol 13 (5) ◽  
pp. 354-357 ◽  
Author(s):  
Raynald Gauvin

The derivation of a universal equation to compute the range of emitted X rays is presented for homogeneous bulk materials. This equation is based on two fundamental assumptions: the φ(ρz) curve of X-ray generation is constant and the ratio of the emitted to the generated X-ray range is equal to the ratio of the emitted to the generated X-ray intensity. An excellent agreement is observed with data obtained from Monte Carlo simulations of 200,000 electron trajectories in C, Al, Cu, Ag, Au, and an Fe–B alloy with boron weight fractions equal to 0.01, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, and 0.99, performed with the electron beam energy varied from 1 to 30 keV in 1-keV steps. When the ratio of the generated X-ray range to the photon mean free path is much smaller than one, the emission X-ray range is equal to the generated X-ray range, but when this ratio is much greater than one, the emission X-ray range is constant and is given by the product of the effective photon mean free path multiplied by the sine of the take-off angle.


2014 ◽  
Vol 78 (9) ◽  
pp. 851-853 ◽  
Author(s):  
V. G. Dyukov ◽  
E. N. Evstaf’eva ◽  
V. A. Stebelkov ◽  
A. A. Tatarintsev ◽  
V. V. Khoroshilov

2014 ◽  
Vol 22 (11) ◽  
pp. 13880 ◽  
Author(s):  
Tong Zhang ◽  
Chao Feng ◽  
Haixiao Deng ◽  
Dong Wang ◽  
Zhimin Dai ◽  
...  

1992 ◽  
Vol 71 (6) ◽  
pp. 2871-2876 ◽  
Author(s):  
P. Girard ◽  
P. Charpenel ◽  
H. Martin

2018 ◽  
Vol 25 (1) ◽  
pp. 282-288 ◽  
Author(s):  
Shigeki Owada ◽  
Kazuaki Togawa ◽  
Takahiro Inagaki ◽  
Toru Hara ◽  
Takashi Tanaka ◽  
...  

The design and performance of a soft X-ray free-electron laser (FEL) beamline of the SPring-8 Compact free-electron LAser (SACLA) are described. The SPring-8 Compact SASE Source test accelerator, a prototype machine of SACLA, was relocated to the SACLA undulator hall for dedicated use for the soft X-ray FEL beamline. Since the accelerator is operated independently of the SACLA main linac that drives the two hard X-ray beamlines, it is possible to produce both soft and hard X-ray FEL simultaneously. The FEL pulse energy reached 110 µJ at a wavelength of 12.4 nm (i.e.photon energy of 100 eV) with an electron beam energy of 780 MeV.


Author(s):  
F. L. Ng ◽  
J. Wei

Nickel and gold films are widely used for microsystems fabrication and packaging, as well as under bump metallization. In this paper, x-ray microanalysis was used to measure the thickness of Ni and Au films. Au and Ni films with varied thicknesses were deposited on silicon (Si) substrate by magnetron sputtering method. Incremental electron beam energy ranging from 4 keV to 30 keV was applied while other parameters were kept constant to determine the electron beam energy required to penetrate the metallic films. The effects of probe current at a fixed electron beam energy on the penetration depth were investigated too. With higher energy applied, the electron beam can penetrate deeper and more Si signal can be detected. The Ni and Au film thicknesses almost have linear relationship with the required penetration electron beam energy. The probe current has minimal effect on the specimen once it has reached the critical excitation probe current. For Ni and Au films with same thickness, higher energy or probe current is needed to penetrate the Au film to reach Si substrate due to the higher Au atomic weight.


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