Enabling High-Efficiency InAs/GaAs Quantum Dot Solar Cells by Epitaxial Lift-Off and Light Management

Author(s):  
F. Cappelluti ◽  
T. Niemi ◽  
M. Guina ◽  
D. Kim ◽  
J. Wu ◽  
...  
Author(s):  
Katsuaki Tanabe ◽  
Denis Guimard ◽  
Damien Bordel ◽  
Ryo Morihara ◽  
Masao Nishioka ◽  
...  

Author(s):  
Antonio Musu ◽  
Federica Cappelluti ◽  
Timo Aho ◽  
Ville Polojärvi ◽  
Tapio Niemi ◽  
...  

2014 ◽  
Vol 136 (25) ◽  
pp. 9203-9210 ◽  
Author(s):  
Zhenxiao Pan ◽  
Iván Mora-Seró ◽  
Qing Shen ◽  
Hua Zhang ◽  
Yan Li ◽  
...  

2018 ◽  
Vol 124 (3) ◽  
Author(s):  
Im Sik Han ◽  
Seung Hyun Kim ◽  
Jong Su Kim ◽  
Sam Kyu Noh ◽  
Sang Jun Lee ◽  
...  

2017 ◽  
Vol 161 ◽  
pp. 377-381 ◽  
Author(s):  
Peng Yu ◽  
Jiang Wu ◽  
Lei Gao ◽  
Huiyun Liu ◽  
Zhiming Wang

2011 ◽  
Author(s):  
K. A. Sablon ◽  
J. W. Little ◽  
V. Mitin ◽  
A. Sergeev ◽  
N. Vagidov ◽  
...  

2014 ◽  
pp. 406-429
Author(s):  
Yoshitaka Okada ◽  
Katsuhisa Yoshida ◽  
Yasushi Shoji

Advanced concepts for high efficiency solar cells such as hot carrier effects, Multi-Exciton Generation (MEG), and Intermediate-Band (IB) absorption in low-dimensional nanostructures are under focused research topics in recent years. Among various potential approaches, this chapter is devoted to the device physics and development of the state-of-the-art technologies for quantum dot-based IB solar cells.


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