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Low-Temperature grown Gallium Arsenide on Silicon by using Migration-Enhanced Epitaxy
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
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10.1109/pvsc.2018.8548036
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2018
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Author(s):
Yu-Cian Wang
◽
Akio Yamamoto
◽
Nobuaki Kojima
◽
Yoshio Ohshita
◽
Masafumi Yamaguchi
Keyword(s):
Gallium Arsenide
◽
Low Temperature
◽
Migration Enhanced Epitaxy
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2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
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Photoluminescence from hot carriers in low‐temperature‐grown gallium arsenide
Applied Physics Letters
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10.1063/1.107044
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Vol 60
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pp. 2246-2248
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Author(s):
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X.‐Q. Zhou
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Keyword(s):
Gallium Arsenide
◽
Low Temperature
◽
Hot Carriers
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gallium arsenide (GaAs), photoluminescence of low temperature grown GaAs
Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. - Landolt-Börnstein - Group III Condensed Matter
◽
10.1007/10860305_115
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2005
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pp. 1-5
Author(s):
Keyword(s):
Gallium Arsenide
◽
Low Temperature
◽
Low Temperature Grown Gaas
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Ultrafast electron trapping times in low-temperature-grown gallium arsenide: The effect of the arsenic precipitate spacing and size
Applied Physics Letters
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2001
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Vol 79
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pp. 2883-2885
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...
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Gallium Arsenide
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Low Temperature
◽
Electron Trapping
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Gallium arsenide metal-insulator-semiconductor field effect transistors (MISFET) with low temperature GaAs insulating layers
[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
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10.1109/cornel.1991.170018
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2002
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C.A. Bozada
◽
R.W. Dettmer
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C.L. Eppers
◽
K. Nakano
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C.E. Stutz
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...
Keyword(s):
Gallium Arsenide
◽
Low Temperature
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Field Effect
◽
Field Effect Transistors
◽
Metal Insulator
◽
Metal Insulator Semiconductor
◽
Low Temperature Gaas
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Low‐temperature migration enhanced epitaxy of base material for AlGaAs/GaAs heterojunction bipolar transistors
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◽
10.1063/1.109915
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◽
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◽
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◽
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◽
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◽
...
Keyword(s):
Low Temperature
◽
Heterojunction Bipolar Transistors
◽
Base Material
◽
Bipolar Transistors
◽
Migration Enhanced Epitaxy
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A Study of Recombination Centers Related to As–Sb Nanoclusters in Low-Temperature Grown Gallium Arsenide
Semiconductors
◽
10.1134/1.1852640
◽
2005
◽
Vol 39
(1)
◽
pp. 33
Author(s):
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Keyword(s):
Gallium Arsenide
◽
Low Temperature
◽
Recombination Centers
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Electron mobility in low temperature grown gallium arsenide
Materials Science and Engineering B
◽
10.1016/0921-5107(95)01347-4
◽
1995
◽
Vol 35
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pp. 330-333
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Cited By ~ 2
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◽
E.M. Goldys
◽
T.L. Tansley
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Gallium Arsenide
◽
Low Temperature
◽
Electron Mobility
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Generation of subpicosecond infrared laser pulses produced by optical switching from low temperature grown gallium arsenide
Proceedings of 1994 Nonlinear Optics: Materials, Fundamentals and Applications
◽
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◽
2002
◽
Author(s):
J. Meyer
◽
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Keyword(s):
Gallium Arsenide
◽
Low Temperature
◽
Optical Switching
◽
Laser Pulses
◽
Infrared Laser
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