[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Gallium arsenide metal-insulator-semiconductor field effect transistors (MISFET) with low temperature GaAs insulating layers

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1991.170018 ◽

2002 ◽

Author(s):

C.A. Bozada ◽

R.W. Dettmer ◽

C.L. Eppers ◽

K. Nakano ◽

C.E. Stutz ◽

...

Keyword(s):

Gallium Arsenide ◽

Low Temperature ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Low Temperature Gaas

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Emitter structure influence on the electron transport mechanism in resonant tunneling diodes

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1991.170044 ◽

2002 ◽

Author(s):

E.T. Koenig ◽

B. Jogai ◽

C.I. Huang ◽

K.R. Evans ◽

C.E. Stutz

Keyword(s):

Electron Transport ◽

Resonant Tunneling ◽

Transport Mechanism ◽

Resonant Tunneling Diodes ◽

Tunneling Diodes

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Parameter extraction technique for accurate measurement of minority electron mobility in N-p-n AlGaAs/GaAs HBTs

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1991.169997 ◽

2002 ◽

Author(s):

S. Lee ◽

A. Gopinath ◽

S.J. Pachuta

Keyword(s):

Electron Mobility ◽

Parameter Extraction ◽

Extraction Technique

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Harmonic cancellation in monolithic AlGaAs/GaAs Npn/Pnp HBT push-pull pairs

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1991.169999 ◽

2002 ◽

Cited By ~ 2

Author(s):

D.B. Slater ◽

P.M. Enquist ◽

J.A. Hutchby ◽

A.S. Morris ◽

R.J. Trew

Keyword(s):

Harmonic Cancellation

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Superconducting digital circuits with low-T/sub c/ and high-T/sub c/ materials

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1991.170047 ◽

2002 ◽

Author(s):

J.H. Kang ◽

J.X. Przybysz ◽

D.L. Miller ◽

D.L. Meier

Keyword(s):

Digital Circuits

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Determination of the optimum condition to introduce the doping in the channel of high speed doped channel AlGaAs/InGaAs HFET's

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1991.170050 ◽

2002 ◽

Cited By ~ 3

Author(s):

J. Dickmann ◽

C. Woelk ◽

A. Schurr ◽

A. Wiersch ◽

E. Kohn ◽

...

Keyword(s):

Optimum Condition ◽

High Speed

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A study of electron transit-time in ballistic diodes using a multi-valley hydrodynamic transport model

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1991.170042 ◽

2002 ◽

Author(s):

D.L. Woolard ◽

R.J. Trew ◽

M.A. Littlejohn ◽

C.T. Kelley

Keyword(s):

Transit Time ◽

Transport Model ◽

Hydrodynamic Transport

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Bipolar resonant tunneling light emitting diodes

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1991.170033 ◽

2002 ◽

Author(s):

C. Van Hoof ◽

J. Genoe ◽

R. Mertens ◽

G. Borghs ◽

E. Goovaerts

Keyword(s):

Resonant Tunneling ◽

Light Emitting Diodes ◽

Light Emitting

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High frequency large signal characterization of heterojunction bipolar transistors

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1991.170000 ◽

2002 ◽

Cited By ~ 1

Author(s):

D.A. Teeter ◽

J.R. East ◽

G.I. Haddad

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Bipolar Transistors ◽

Large Signal ◽

Signal Characterization

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A Monte Carlo simulation of electron transit times in dissipative quantum devices

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1991.170045 ◽

2002 ◽

Cited By ~ 1

Author(s):

A.N. Khondker ◽

M.A. Alam

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Quantum Devices ◽

Transit Times

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[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Gallium arsenide metal-insulator-semiconductor field effect transistors (MISFET) with low temperature GaAs insulating layers

Emitter structure influence on the electron transport mechanism in resonant tunneling diodes

Parameter extraction technique for accurate measurement of minority electron mobility in N-p-n AlGaAs/GaAs HBTs

Harmonic cancellation in monolithic AlGaAs/GaAs Npn/Pnp HBT push-pull pairs

Superconducting digital circuits with low-T/sub c/ and high-T/sub c/ materials

Determination of the optimum condition to introduce the doping in the channel of high speed doped channel AlGaAs/InGaAs HFET's

A study of electron transit-time in ballistic diodes using a multi-valley hydrodynamic transport model

Bipolar resonant tunneling light emitting diodes

High frequency large signal characterization of heterojunction bipolar transistors

A Monte Carlo simulation of electron transit times in dissipative quantum devices

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[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and CircuitsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Gallium arsenide metal-insulator-semiconductor field effect transistors (MISFET) with low temperature GaAs insulating layers

Emitter structure influence on the electron transport mechanism in resonant tunneling diodes

Parameter extraction technique for accurate measurement of minority electron mobility in N-p-n AlGaAs/GaAs HBTs

Harmonic cancellation in monolithic AlGaAs/GaAs Npn/Pnp HBT push-pull pairs

Superconducting digital circuits with low-T/sub c/ and high-T/sub c/ materials

Determination of the optimum condition to introduce the doping in the channel of high speed doped channel AlGaAs/InGaAs HFET's

A study of electron transit-time in ballistic diodes using a multi-valley hydrodynamic transport model

Bipolar resonant tunneling light emitting diodes

High frequency large signal characterization of heterojunction bipolar transistors

A Monte Carlo simulation of electron transit times in dissipative quantum devices

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Latest Publications