Total dose effects on elementary transistors of a comparator in bipolar technology

2002 ◽  
Author(s):  
J.M. Bosc ◽  
G. Sarrabayrouse ◽  
F.X. Guerre
Keyword(s):  
Total Dose ◽  
Bipolar Technology ◽  
Dose Effects ◽  
Total Dose Effects

scholarly journals Total Dose Effects on 4H-SiC Bipolar Junction Transistors

2017 ◽  
Vol 897 ◽  
pp. 579-582
Author(s):  
Sethu Saveda Suvanam ◽  
Luigia Lanni ◽  
Bengt Gunnar Malm ◽  
Carl Mikael Zetterling ◽  
Anders Hallén
Keyword(s):  
Total Dose ◽  
Detailed Analysis ◽  
Surface Recombination ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Displacement Damage ◽  
Base Current ◽  
Dose Effects ◽  
Order Of Magnitude ◽  
Total Dose Effects

In this work, total dose effects on 4H-SiC bipolar junction transistors (BJT) are investigated. Three 4H-SiC NPN BJT chips are irradiated with 3MeV protons with a dose of 1×1011, 1×1012 and 1×1013 cm-2, respectively. From the measured reciprocal current gain it is observed that 4H-SiC NPN BJT exposed to protons suffer both displacement damage and ionization, whereas, a traditional Si BJT suffers mainly from displacement damage. Furthermore, bulk damage introduction rates for SiC BJT were extracted to be 3.3×10-15 cm2, which is an order of magnitude lower compared to reported Si values. Finally, from detailed analysis of the base current at low injection levels, it is possible to distinguish when surface recombination leakage is dominant over bulk recombination.

Total Dose Effects in the 54HC Family of Microcircuits

1984 ◽  
Vol 31 (6) ◽  
pp. 1358-1363 ◽  
Author(s):  
Stan Ropiak ◽  
Kusum Sahu ◽  
Dave Cleveland
Keyword(s):  
Total Dose ◽  
Dose Effects ◽  
Total Dose Effects

(Invited) Total Dose Effects and Single Event Upsets During Radiation Damage of GaN and SiC

2021 ◽  
Vol 104 (7) ◽  
pp. 13-34
Author(s):  
Ani Khachatrian ◽  
Adrian Ildefonso ◽  
Zahabul Islam ◽  
Md Abu Jafar Rasel ◽  
Amanul Haque ◽  
...  
Keyword(s):  
Total Dose ◽  
Radiation Damage ◽  
Single Event ◽  
Single Event Upsets ◽  
Dose Effects ◽  
Total Dose Effects

Total dose effects on the matching properties of deep submicron MOS transistors

2014 ◽  
Vol 35 (6) ◽  
pp. 064007 ◽  
Author(s):  
Yuxin Wang ◽  
Rongbin Hu ◽  
Ruzhang Li ◽  
Guangbing Chen ◽  
Dongbing Fu ◽  
...  
Keyword(s):  
Total Dose ◽  
Deep Submicron ◽  
Mos Transistors ◽  
Dose Effects ◽  
Total Dose Effects

Total dose effects in the auger transistor

2002 ◽  
Author(s):  
Dmitry V. Gromov ◽  
Vadim V. Elesin ◽  
Aledxander Y. Nikiforov ◽  
Stanislav A. Polevich ◽  
Yury F. Adamov ◽  
...  
Keyword(s):  
Total Dose ◽  
Dose Effects ◽  
Total Dose Effects

Total Dose Effects in 0.5 μm CMOS Active Pixel Image Sensor

2015 ◽  
Vol 36 (2) ◽  
pp. 242-248 ◽  
Author(s):  
汪波 WANG Bo ◽  
李豫东 LI Yu-dong ◽  
郭旗 GUO Qi ◽  
刘昌举 LIU Chang-ju ◽  
文林 WEN Lin ◽  
...  
Keyword(s):  
Total Dose ◽  
Image Sensor ◽  
Active Pixel ◽  
Dose Effects ◽  
Total Dose Effects ◽  
Pixel Image

Total dose effects on double gate fully depleted SOI MOSFETs

2004 ◽  
Vol 51 (6) ◽  
pp. 3767-3772 ◽  
Author(s):  
Bongim Jun ◽  
H.D. Xiong ◽  
A.L. Sternberg ◽  
C.R. Cirba ◽  
Dakai Chen ◽  
...  
Keyword(s):  
Total Dose ◽  
Double Gate ◽  
Fully Depleted ◽  
Dose Effects ◽  
Total Dose Effects

Total Dose Effects on Negative and Positive Low-Dropout Linear Regulators

2020 ◽  
Vol 67 (7) ◽  
pp. 1332-1338
Author(s):  
A. Privat ◽  
P. W. Davis ◽  
H. J. Barnaby ◽  
P. C. Adell
Keyword(s):  
Total Dose ◽  
Dose Effects ◽  
Total Dose Effects ◽  
Linear Regulators

TOTAL DOSE EFFECTS IN LINEAR BIPOLAR INTEGRATED CIRCUITS

2004 ◽  
Vol 14 (02) ◽  
pp. 519-541 ◽  
Author(s):  
H. J. BARNABY
Keyword(s):  
Integrated Circuits ◽  
Total Dose ◽  
Radiation Effects ◽  
Rate Sensitivity ◽  
Circuit Parameter ◽  
Enhanced Sensitivity ◽  
Dose Effects ◽  
Radiation Induced ◽  
Total Dose Effects ◽  
Bipolar Circuit

Electronics systems that operate in space or strategic environments can be severely damaged by exposure to ionizing radiation. Space-based systems that utilize linear bipolar integrated circuits are particularly susceptible to radiation-induced damage because of the enhanced sensitivity of these circuits to the low rate of radiation exposure. The phenomenon of enhanced low-dose-rate sensitivity (ELDRS) demonstrates the need for a comprehensive understanding of the mechanisms of total dose effects in linear bipolar circuits. The majority of detailed bipolar total dose studies to date have focused on radiation effects mechanisms at either the process or transistor level. The goal of this text is to provide an overview of total dose mechanisms from the circuit perspective; in particular, the effects of transistor gain degradation on specific linear bipolar circuit parameters and the effects of circuit parameter degradation on select linear bipolar circuit applications.

Passivation layers for reduced total dose effects and eldrs in linear bipolar devices

2003 ◽  
Vol 50 (6) ◽  
pp. 1784-1790 ◽  
Author(s):  
M.R. Shaneyfelt ◽  
R.L. Pease ◽  
M.C. Maher ◽  
J.R. Schwank ◽  
S. Gupta ◽  
...  
Keyword(s):  
Total Dose ◽  
Bipolar Devices ◽  
Dose Effects ◽  
Passivation Layers ◽  
Total Dose Effects
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