Picosecond Pulsed Laser System (PPLS) was used to
simulate the single event effects (SEE) on satellite electronic
components. Single event transients effect induced in an
operational amplifier (LM324) to determine how transient
amplitude and charge collection varied with pulsed laser energies.
The wavelength and the focused spot size are the primary factors
generating the resultant charge density profile. The degradation
performance of LM324 induced by pulsed laser irradiation with
two wavelength (1064nm, 532nm) is determined as a function of
laser cross section. The transient voltage changed due to pulsed
laser hitting specific transistors. This research shows the
sensitivity mapping of LM324 under the effect of fundamental and
second harmonic wavelengths. Determine the threshold energy of
the SET in both wavelength, and compare the laser cross section
of 1064 nm beam and 532 nm beam.
Qualification of Operational Amplifier used in Satellite Subsystem using Picosecond Pulsed Laser System
