scholarly journals Qualification of Operational Amplifier used in Satellite Subsystem using Picosecond Pulsed Laser System

2020 ◽  
Vol 9 (2) ◽  
pp. 523-527
Keyword(s):  
Cross Section ◽  
Operational Amplifier ◽  
Second Harmonic ◽  
Laser System ◽  
Threshold Energy ◽  
Pulsed Laser ◽  
Spot Size ◽  
Single Event ◽  
532 Nm ◽  
Pulsed Laser Irradiation

Picosecond Pulsed Laser System (PPLS) was used to simulate the single event effects (SEE) on satellite electronic components. Single event transients effect induced in an operational amplifier (LM324) to determine how transient amplitude and charge collection varied with pulsed laser energies. The wavelength and the focused spot size are the primary factors generating the resultant charge density profile. The degradation performance of LM324 induced by pulsed laser irradiation with two wavelength (1064nm, 532nm) is determined as a function of laser cross section. The transient voltage changed due to pulsed laser hitting specific transistors. This research shows the sensitivity mapping of LM324 under the effect of fundamental and second harmonic wavelengths. Determine the threshold energy of the SET in both wavelength, and compare the laser cross section of 1064 nm beam and 532 nm beam.

scholarly journals Second Harmonic Generation Using an All-Fiber Q-Switched Yb-Doped Fiber Laser and MgO:c-PPLN

2008 ◽  
Vol 2008 ◽  
pp. 1-6 ◽  
Author(s):  
Yi Gan ◽  
Xijia Gu ◽  
Joyce Y. C. Koo ◽  
Wanguo Liang ◽  
Chang-qing Xu
Keyword(s):  
Second Harmonic Generation ◽  
Fiber Laser ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Laser System ◽  
Average Output ◽  
Periodically Poled ◽  
Theoretical Simulation ◽  
Periodically Poled Lithium Niobate ◽  
532 Nm

We have experimentally demonstrated an efficient all-fiber passively Q-switched Yb-doped fiber laser with Samarium doped fiber as a saturable absorber. Average output power of 3.4 W at a repetition rate of 250 kHz and a pulse width of 1.1 microseconds was obtained at a pump power of 9.0 W. By using this fiber laser system and an MgO-doped congruent periodically poled lithium niobate (MgO:c-PPLN), second harmonic generation (SHG) output at 532 nm was achieved at room temperature. The conversion efficiency is around 4.2% which agrees well with the theoretical simulation.

Pulsed Laser Deposition (PLD) Technique to Prepare Biocompatible Thin Films

2006 ◽  
Vol 49 ◽  
pp. 56-61 ◽  
Author(s):  
Joseph J. Beltrano ◽  
Lorenzo Torrisi ◽  
Anna Maria Visco ◽  
Nino Campo ◽  
E. Rapisarda
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Target Material ◽  
Xrd Analysis ◽  
Spot Size ◽  
Laser Deposition ◽  
Laser Source ◽  
Medical Field ◽  
Hot Plasma ◽  
532 Nm

A Nd:YAG laser is employed to ablate different materials useful in the bio-medical field. The laser source operates in the IR (1064 nm), VIS (532 nm) and UV (355 nm) regions with a pulse duration of 3-9 ns, a pulse energy of 3-300 mJ, a spot size of 1 mm2 and a repetition rate of 1- 30 Hz. Target material of interest are Titanium, Carbon, Hydroxyapatite (HA) and Polyethylene (PE). Laser irradiation occurs in vacuum, where hot plasma is generated, and thin films are deposited on near substrates. Generally, substrates of silicon, titanium, titanium-alloys and polymers were employed. Biocompatible thin films are investigated with different surface techniques, such as IR spectroscopy, Raman spectroscopy, XRD analysis and SEM investigations. Depending of the kind of possible application, films require special properties concerning the grain size, porosity, uniformity, wetting, hardness, adhesion, crystallinity and composition. The obtained results will be presented and discussed with particular regard to HA..

Microstructural Characterization of Ni-Al Alloyed Layer under Laser Rapid Solidification Condition

2011 ◽  
Vol 328-330 ◽  
pp. 565-568
Author(s):  
Yue Yang ◽  
Hua Wu
Keyword(s):  
Cross Section ◽  
Pulsed Laser ◽  
Microstructural Characterization ◽  
Eutectic Growth ◽  
Nickel Layer ◽  
Solidification Condition ◽  
Melted Zone ◽  
Transmission Electron ◽  
Pulsed Laser Irradiation

Nickel layer electroless deposited on aluminum substrate was alloyed by Nd-YAG pulsed laser irradiation. Solidification microstructure was characterized through cross section, showing typical microstructure that were located in upper and middle melted zone and interface of melted pool and substrate, respectively. The microstructure was analyzed by transmission electron microscopy (TEM). Followed by the observations, the eutectic growth process was analyzed.

scholarly journals Application of Two-Photon-Absorption Pulsed Laser for Single-Event-Effects Sensitivity Mapping Technology

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3411 ◽  
Author(s):  
Cheng Gu ◽  
Rui Chen ◽  
George Belev ◽  
Shuting Shi ◽  
Haonan Tian ◽  
...  
Keyword(s):  
Laser System ◽  
Pulsed Laser ◽  
Photon Absorption ◽  
Testing System ◽  
Single Event ◽  
Single Event Effects ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Sram Cell ◽  
Sensitivity Map

Single-event effects (SEEs) in integrated circuits and devices can be studied by utilizing ultra-fast pulsed laser system through Two Photon Absorption process. This paper presents technical ways to characterize key factors for laser based SEEs mapping testing system: output power from laser source, spot size focused by objective lens, opening window of Pockels cell, and calibration of injected laser energy. The laser based SEEs mapping testing system can work in a stable and controllable status by applying these methods. Furthermore, a sensitivity map of a Static Random Access Memory (SRAM) cell with a 65 nm technique node was created through the established laser system. The sensitivity map of the SRAM cell was compared to a map generated by a commercial simulation tool (TFIT), and the two matched well. In addition, experiments in this paper also provided energy distribution profile along Z axis that is the direction of the pulsed laser injection and threshold energy for different SRAM structures.

Pulsed laser irradiation at 532 nm of In and Ga adsorbed on Si(100): Desportion, incorporation, and damage

1992 ◽  
Vol 10 (3) ◽  
pp. 508-514 ◽  
Author(s):  
Paul G. Strupp ◽  
April L. Alstrin ◽  
Brenda J. Korte ◽  
Stephen R. Leone
Keyword(s):  
Laser Irradiation ◽  
Pulsed Laser ◽  
532 Nm ◽  
Pulsed Laser Irradiation

Melting Phenomena and Impurity Redistribution During Pulsed Laser Irradiation of Amorphous Silicon Layers

1983 ◽  
Vol 23 ◽  
Author(s):  
J. Narayan ◽  
C. W. White ◽  
O. W. Holland
Keyword(s):  
Electron Microscopy ◽  
Amorphous Silicon ◽  
Cross Section ◽  
Pulsed Laser ◽  
Nucleation And Growth ◽  
Bulk Nucleation ◽  
Section Electron ◽  
Section Electron Microscopy ◽  
Pulsed Laser Irradiation ◽  
Impurity Redistribution

ABSTRACTwe have investigated microstructural changes and phase transformations in 30Si+, 75As+, 63Cu+, and 115In+ implanted amorphous silicon layers as a function of pulse energy density. Cross-section electron microscopy studies have revealed the formation of two distinct regions, large and fine polycrystalline regions below the threshold for “defect-free” annealing. The fine polycrystalline region is formed primarily by explosive recrystallization, and occasionally by bulk nucleation and growth. The impurity redistribution in the large and fine polycrystalline regions were determined by Rutherford backscatterinq measurements. Large redistributions of impurities in the large poly region are consistent with velocity of solidifications of 3–5 ms−1. The nature of impurity redistributions in the fine poly region as a function of distribution coefficient provides information on the details of liquid phase crystallization phenomena.

Comparison of single-event transients induced in an operational amplifier (LM124) by pulsed laser light and a broad beam of heavy ions

2004 ◽  
Vol 51 (5) ◽  
pp. 2776-2781 ◽  
Author(s):  
S. Buchner ◽  
D. McMorrow ◽  
C. Poivey ◽  
J. Howard ◽  
Y. Boulghassoul ◽  
...  
Keyword(s):  
Operational Amplifier ◽  
Heavy Ions ◽  
Laser Light ◽  
Pulsed Laser ◽  
Single Event ◽  
Broad Beam ◽  
Single Event Transients

Electron Energy Distributions During Pulsed Laser Annealing and Damage of Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
R. T. Williams ◽  
M. N. Kabler ◽  
J. P. Long ◽  
J. C. Rife ◽  
T. R. Royt
Keyword(s):  
Energy Resolution ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Energy Distributions ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Cylindrical Mirror ◽  
Molten Phase ◽  
532 Nm ◽  
Pulsed Laser Irradiation

ABSTRACTSpectra of photoelectrons and thermionic electrons emitted from silicon during pulsed laser irradiation at energy densities encompassing the thresholds for laser annealing and damage are reported. Annealing is accomplished with a 90-nsec pulse of 532-nm light, which may be accompanied by a 266-nm probe pulse. A cylindrical mirror analyzer is used for energy resolution of emitted electrons. Time-resolved reflectivity at 633 nm verifies attainment of the high-reflectivity annealing phase. Spectral widths and total yields imply a modest electron temperature (T < 3000 K) during annealing. The data suggest that the work function of the silicon (111) face may increase about 0.6 eV upon transition to the molten phase.

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