Total ionizing dose tolerance of the resistance switching of Ag-Ge4oSeo based Programmable Metallization Cells

2013 ◽  
Author(s):  
P. Dandamudi ◽  
H. J. Barnaby ◽  
M. N. Kozicki ◽  
Y. Gonzalez-Velo ◽  
K. E. Holbert
Keyword(s):  
Resistance Switching ◽  
Total Ionizing Dose ◽  
Programmable Metallization Cells ◽  
Dose Tolerance ◽  
Metallization Cells

Total Ionizing Dose Tolerance of ${\rm Ag} - {\rm Ge}_{40}{\rm S}_{60}$ based Programmable Metallization Cells

2014 ◽  
Vol 61 (4) ◽  
pp. 1726-1731 ◽  
Author(s):  
P. Dandamudi ◽  
M. N. Kozicki ◽  
H. J. Barnaby ◽  
Y. Gonzalez-Velo ◽  
K. E. Holbert
Keyword(s):  
Total Ionizing Dose ◽  
Programmable Metallization Cells ◽  
Dose Tolerance ◽  
Metallization Cells

(Invited) Programmable Metallization Cells in Memory and Switching Applications

2013 ◽  
Vol 58 (5) ◽  
pp. 47-52 ◽  
Author(s):  
M. N. Kozicki ◽  
P. Dandamudi ◽  
H. J. Barnaby ◽  
Y. Gonzalez-Velo
Keyword(s):  
Programmable Metallization Cells ◽  
Metallization Cells
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