Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiOx/SiO2 solid electrolytes

Polycrystalline NiO thin films were fabricated on Pt (111)/Ti/SiO2/Si substrates by thermal oxidation of the evaporated Ni films. Pt/NiO/Pt structures were prepared, and they showed reversible resistance switching behaviors. When the compliance set current was varied from 5 mA to 40 mA, the on-state currents increased, while the on-state resistances decreased. It is probably attributed to higher current compliance resulted in the formation of stronger and less resistive filaments, which in turn need more energy and power for their rupture. The resistive switching in NiO thin films is closely related to the formation and rupture of conducting filaments.

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Electrochemically prepared oxides for resistive switching memories

Faraday Discussions ◽

10.1039/c8fd00112j ◽

2019 ◽

Vol 213 ◽

pp. 165-181 ◽

Cited By ~ 6

Author(s):

A. Zaffora ◽

F. Di Quarto ◽

H. Habazaki ◽

I. Valov ◽

M. Santamaria

Keyword(s):

Resistive Switching ◽

Solid Electrolytes

Electrochemically grown anodic oxides of different compositions and properties were tested as solid electrolytes for resistive switching memories.

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Effect of Current Compliance on Resistive Switching Characteristics of Amorphous Ternary Rare Earth Oxide SmGdO3 Thin Films Grown by Pulsed Laser Deposition

ECS Meeting Abstracts ◽

10.1149/ma2014-01/37/1417 ◽

2014 ◽

Keyword(s):

Thin Films ◽

Rare Earth ◽

Pulsed Laser Deposition ◽

Resistive Switching ◽

Pulsed Laser ◽

Rare Earth Oxide ◽

Laser Deposition ◽

Current Compliance ◽

Switching Characteristics

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IMPROVEMENT OF RETENTIVITY IN TiOx/HfOx BILAYER STRUCTURE FOR LOW POWER RESISTIVE SWITCHING MEMORY APPLICATIONS

Surface Review and Letters ◽

10.1142/s0218625x15500316 ◽

2015 ◽

Vol 22 (02) ◽

pp. 1550031 ◽

Cited By ~ 6

Author(s):

PRANAB KUMAR SARKAR ◽

ASIM ROY

Keyword(s):

Resistive Switching ◽

Conduction Mechanism ◽

Memory Cell ◽

Data Retention ◽

Bipolar Resistive Switching ◽

Switching Performance ◽

Current Voltage ◽

Metal Insulator Metal ◽

Current Compliance ◽

Memory Applications

This paper reports the bipolar resistive switching (BRS) characteristics in Al / Ti / TiO x/ HfO x/ Pt heterostructure during a DC sweep cycle with current compliance (CC) of 250 μA. The improvement in the switching performance in a CMOS compatible Al / Ti / TiO x/ HfO x/ Pt memory cell has been observed. The improvement is due to oxygen-rich HfO x layer insertion in simple metal-insulator-metal (MIM) sandwich structure. Analysis of current–voltage (I–V) characteristics revealed the trap-controlled space charge limited current (TC-SCLC) conduction mechanism is the most suitable mechanism signifying the dominant current conduction in all the bias regions and resistance states. Furthermore, this bilayer memory stack exhibits a tight distribution of switching parameters, good switching endurance up to 105 cycles, and good data retention of > 104 s at 85°C.

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