High performance D-band (118 GHz) monolithic low noise amplifier

Author(s):  
M. Nishimoto ◽  
M. Sholley ◽  
H. Wang ◽  
R. Lai ◽  
M. Barsky ◽  
...  
2015 ◽  
Vol 719-720 ◽  
pp. 862-868
Author(s):  
Yan Fen Chen ◽  
Fu Hong Zhang

The noise coefficient and the power gain of a low noise amplifier affect the whole performance of the receiver. This paper presents the design and simulation of 2-stage low noise amplifier using the MGA633P8 and TQP3M9028’s S parameters to set S2P files. Not only analyze how to insert elements to match a broadband circuit, but also make some optimization by using the Agilent ADS in the case of small signal. Simulation results show that the proposed work implements a high performance of 2-stage low noise amplifier which works at 824 MHZ to 1980 MHZ, the gain is greater than 25 db, the noise coefficient is less than 0.6, input and output standing wave ratio (SWR) are both less than 1.3.


2021 ◽  
Vol 16 (4) ◽  
pp. 559-564
Author(s):  
Chao Huang ◽  
Wan-Jun Yin

This paper designs a body-biased (BB) differential cascode low-noise amplifier (LNA) with current bias (CR) and capacitor cross-coupling (CCC) technology that meets the bandwidth requirements of 5 GHz wireless applications. In the design, the CCC technology in the differential cascode topology is used to effectively suppress the common mode noise, thereby improving the noise figure. The series resonant network eliminates parasitic capacitance at the input and output ends, thereby improving the power transmission efficiency. The CR technology formed by the intermediate capacitor shares the DC current input to the output device, thereby increasing the gain. This paper uses BB technology in the design to lower the threshold of the cascode device and improve the transconductance, which further improves the gain and reduces the power consumption. The CCC technology used in the paper improves linearity by eliminating the non-linear components present in the input device, which will not interfere with the transconductance of the output stage. This article has obtained excellent performance parameters including gain, noise figure (NF) and linearity without affecting the power consumption, integration and cost of the proposed design.


Author(s):  
Abu Bakar Ibrahim ◽  
Ahmad Zamzuri Mohamad Ali

<p>Advancement in the wireless industry, internet access without borders and increasing demand for high data rate wireless digital communication moving us toward the optimal development of communication technology. Wireless communication is a technology that plays an important role in current technology transformation. Broadband communication is a method of telecommunication that are available for transmitting large amounts of data, voice and video over long distance using different frequencies. Specifically, Low Noise Amplifier which is located at the first block of receiver system, makes it one of the important element in improving signal transmition. This study was aimed to design a microwave Low Noise Amplifier for wireless application that will work at 5.8 GHz using  high-performance low noise superHEMT transistor FHX76LP manufactured by Eudyna Technologies. The low noise amplifier (LNA) produced gain of 16.8 dB and noise figure (NF) of 1.20 dB. The input reflection (S<sub>11</sub>) and output return loss (S<sub>22</sub>) are -10.5 dB and -13.3 dB respectively. The bandwidth of the amplifier recorded is 1.2 GHz. The input sensitivity is compliant with the IEEE 802.16 standards.</p>


Author(s):  
Koushik Murali Subramani ◽  
Gopi Tharun Maganti ◽  
M Gowri Jegatheesh ◽  
Y Alokh Krishnaa ◽  
Karthigha Balamurugan

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