Design of a 2-Stage Broadband Low Noise Amplifier Based on the Agilent ADS

2015 ◽  
Vol 719-720 ◽  
pp. 862-868
Author(s):  
Yan Fen Chen ◽  
Fu Hong Zhang
Keyword(s):  
Standing Wave ◽  
High Performance ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Small Signal ◽  
Power Gain ◽  
Input And Output ◽  
Signal Simulation ◽  
Simulation Results ◽  
Noise Amplifier

The noise coefficient and the power gain of a low noise amplifier affect the whole performance of the receiver. This paper presents the design and simulation of 2-stage low noise amplifier using the MGA633P8 and TQP3M9028’s S parameters to set S2P files. Not only analyze how to insert elements to match a broadband circuit, but also make some optimization by using the Agilent ADS in the case of small signal. Simulation results show that the proposed work implements a high performance of 2-stage low noise amplifier which works at 824 MHZ to 1980 MHZ, the gain is greater than 25 db, the noise coefficient is less than 0.6, input and output standing wave ratio (SWR) are both less than 1.3.

scholarly journals 28 GHz Off-the-Shelf Low Noise Amplifier for 5G Baseband Wireless System

2020 ◽  
Vol 9 (3) ◽  
pp. 3051-3058
Keyword(s):  
Return Loss ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Common Source ◽  
Power Gain ◽  
Wireless System ◽  
Simulation Process ◽  
Input And Output ◽  
Receiver System ◽  
Noise Amplifier

This paper presents the simulation and measured results of a Low Noise Amplifier (LNA) working at 28 GHz for the 5G wireless system. LNA is used to amplify the weak receiving signals in the RF receiver system. The 28 GHz (Ka-band) LNA is designed to work for 5G technology wireless system. Here a Fujitsu FHR02X transistor is used in the simulation process, where the one-stage LNA is adopting a common-source with source inductive degenerative topology.In the fabrication process, GaAs pHEMT MMIC HMC519LC4 LNA is mounted on the Rogers 4003C board (εr = 3.38 and δ = 0.0027)and tested using (PNA-X N5246A) Microwave Network Analyzer. The final LNA design in the simulation process achieves a power gain of 9.185 dB, input and output return losses of – 13.124 dB and – 15.455 dB respectively, and noise figure of 9.185 dB. Furthermore, the fabricated LNA achieves a power gain of 10.91 dB, input and output return losses of - 7.75 dB and - 22.13 dB respectively. Although the return loss (S11) value is higher than -10 dB, but the LNA still able to obtain gain more than 10 dB.Thesimulation and fabricated LNA have input return loss quite closed to the given value in the datasheet. Thus, the LNA transmission line has a good output matching design.

scholarly journals Realisasi LNA Dua Tingkat dengan Teknik Penyesuai Impedansi Trafo λ/4 dan Lumped Element untuk DVB-T2

2020 ◽  
Vol 8 (1) ◽  
pp. 1
Author(s):  
ASEP KARYANA ◽  
YUYUN SITI ROHMAH ◽  
BUDI PRASETYA
Keyword(s):  
Standing Wave ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Voltage Standing Wave Ratio ◽  
Digital Video Broadcasting ◽  
Video Broadcasting ◽  
Lumped Element ◽  
Input And Output ◽  
Noise Amplifier

ABSTRAK Digital Video Broadcasting-Second Generation Terrestrial (DVB-T2) merupakan standar internasional yang menaungi pemberlakuan televisi digital saat ini. Pada konfigurasi DVB-T2 terdapat perangkat penerima sinyal di sisi pelanggan. Permasalahan yang sering dijumpai adalah lemahnya daya sinyal yang diterima. Oleh sebab itu, dibutuhkan penguat daya pada sistem penerima, yaitu Low Noise Amplifier (LNA) yang diletakkan setelah antena penerima. Pada penelitian ini, direalisasikan LNA menggunakan transistor BJT BFR96 dengan target desain dualstage, matching impedance Trafo λ/4 pada sisi input dan output, serta lumped element untuk penyepadanan impedansi antar tingkat. LNA direalisasikan untuk bekerja optimal pada frekuensi 630 MHz. Nilai Gain dan Noise Figure (NF) yang diperoleh berturut-turut, yaitu 12.96 dB dan 4.05 dB. Selain itu, nilai Voltage Standing Wave Ratio (VSWR) input dan output yang diperoleh berturut-turut sebesar 3.5674 dan 1.7718. Kata kunci: DVB-T2, LNA, Televisi, Gain, Noise Figure ABSTRACT Digital Video Broadcasting-Second Generation Terrestrial (DVB-T2) is the international standard that over shadows the current implementation of digital television. In the DVB-T2 configuration, there is a signal receiving device on the receiver side. The problem that is often encountered is the weak signal power received. Therefore, a power amplifier is needed in the receiving system, namely Low Noise Amplifier (LNA) which is placed after the receiving antenna. In this research, LNA was realized using a BJT BFR96 transistor with a dual-stage configuration design target, λ/4 impedance matching transformer on the input and output sides, and a lumped element for interstage matching impedances. LNA is realized to work optimally at frequency of 630 MHz. The Gain and Noise Figure (NF) values obtained were 12.96 dB and 4.05 dB, respectively. In addition, the input and output Voltage Standing Wave Ratio (VSWR) values obtained were 3.5674 and 1.7718, respectively. Keywords: DVB-T2, LNA, Television, Gain, Noise Figure

Design of Broadband LNA Using Improved Self-Bias Architecture

2019 ◽  
Vol 28 (08) ◽  
pp. 1920005 ◽  
Author(s):  
Tian Qi ◽  
Songbai He
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Power Gain ◽  
Matching Networks ◽  
Self Bias ◽  
Measurement Results ◽  
Chip Size ◽  
Simulation Results ◽  
Noise Amplifier ◽  
Ku Band

A broadband low-noise amplifier (LNA) using 0.13 [Formula: see text]m GaAs HEMT technology for Ku-band applications is presented in this paper. By introducing an improved self-bias architecture, the LNA is achieved with low noise figure (NF) and high power gain. Compared with traditional LNA, self-bias architecture can reduce DC supplies to single one, and the improved architecture proposed here also takes part in source matching to reduce the complexity matching networks for broadband applications. To verify, an LNA operating over 12–18-GHz bandwidth is fabricated. The measurement results, for all the 72 chips on the wafer, and their average values are in great accordance with the simulation results, with 25.5–27.5-dB power gain, 1.1–1.8-dB NF, 15–17.5-dBm output power at [Formula: see text] and with a chip size of 2 mm [Formula: see text] 1.5 mm.

scholarly journals Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 150 ◽  
Author(s):  
Lorenzo Pace ◽  
Sergio Colangeli ◽  
Walter Ciccognani ◽  
Patrick Ettore Longhi ◽  
Ernesto Limiti ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Gate Length ◽  
Small Signal ◽  
Linear Measurements ◽  
Ka Band ◽  
Noise Amplifier ◽  
Gan On Si ◽  
Noise Models

In this paper a GaN-on-Si MMIC Low-Noise Amplifier (LNA) working in the Ka-band is shown. The chosen technology for the design is a 100 nm gate length HEMT provided by OMMIC foundry. Both small-signal and noise models had been previously extracted by the means of an extensive measurement campaign, and were then employed in the design of the presented LNA. The amplifier presents an average noise figure of 2.4 dB, a 30 dB average gain value, and input/output matching higher than 10 dB in the whole 34–37.5 Ghz design band, while non-linear measurements testify a minimum output 1 dB compression point of 23 dBm in the specific 35–36.5 GHz target band. This shows the suitability of the chosen technology for low-noise applications.

scholarly journals Small-signal and noise GaAs pHEMT modeling for low noise amplifier design

2020 ◽  
Vol 1499 ◽  
pp. 012033
Author(s):  
A A Popov ◽  
D V Bilevich ◽  
A A Metel ◽  
A S Salnikov ◽  
I M Dobush ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Small Signal ◽  
Amplifier Design ◽  
Noise Amplifier
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