A 38 GHz inverse class-F power amplifier with 38.5% peak PAE, 16.5 dB gain, and 50 mW Psat in 0.13-µm SiGe BiCMOS

2015 ◽  
Author(s):  
Seyed Yahya Mortazavi ◽  
Kwang-Jin Koh
Keyword(s):  
Power Amplifier ◽  
Sige Bicmos ◽  
Class F

A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier

2011 ◽  
Vol E94-C (7) ◽  
pp. 1193-1198 ◽  
Author(s):  
Akihiro ANDO ◽  
Yoichiro TAKAYAMA ◽  
Tsuyoshi YOSHIDA ◽  
Ryo ISHIKAWA ◽  
Kazuhiko HONJO
Keyword(s):  
Power Amplifier ◽  
Average Power ◽  
Gan Hemt ◽  
Class F

Design flow for a SiGe BiCMOS based power amplifier

2009 ◽  
Author(s):  
Mladen Bozanic ◽  
Saurabh Sinha ◽  
Monuko du Plessis ◽  
Alexandru Muller
Keyword(s):  
Power Amplifier ◽  
Design Flow ◽  
Sige Bicmos

Investigating Continuous Class-F Power Amplifier Using Nonlinear Embedding Model

2017 ◽  
Vol 27 (6) ◽  
pp. 593-595 ◽  
Author(s):  
Ekta Aggrawal ◽  
Karun Rawat ◽  
Patrick Roblin
Keyword(s):  
Power Amplifier ◽  
Nonlinear Embedding ◽  
Class F

Class-F Power Amplifier with Dual-Mode Filtering Response

2021 ◽  
Author(s):  
Liheng Zhou ◽  
Xinyu Zhou ◽  
Zhen Xing Yang ◽  
Wing Shina Chan
Keyword(s):  
Power Amplifier ◽  
Dual Mode ◽  
Class F
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