A highly Integrated SiGe BiCMOS Class F Power Amplifier for Bluetooth Application

2006 International Symposium on VLSI Design, Automation and Test ◽

10.1109/vdat.2006.258183 ◽

2006 ◽

Author(s):

Jia-liang Chen ◽

Tang-jung Chiu ◽

Christina F. Jou

Keyword(s):

Power Amplifier ◽

Sige Bicmos ◽

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A 38 GHz inverse class-F power amplifier with 38.5% peak PAE, 16.5 dB gain, and 50 mW Psat in 0.13-µm SiGe BiCMOS

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) ◽

10.1109/rfic.2015.7337742 ◽

2015 ◽

Author(s):

Seyed Yahya Mortazavi ◽

Kwang-Jin Koh

Keyword(s):

Power Amplifier ◽

Sige Bicmos ◽

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A 38-GHz Millimeter-Wave Double-Stacked HBT Class-F−1 High-Gain Power Amplifier in 130-nm SiGe-BiCMOS

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2020.2988874 ◽

2020 ◽

Vol 68 (7) ◽

pp. 3039-3044

Author(s):

Syed Muhammad Ammar Ali ◽

S. M. Rezaul Hasan

Keyword(s):

Millimeter Wave ◽

Power Amplifier ◽

High Gain ◽

Sige Bicmos ◽

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14.4 A Class F-1/F 24-to-31GHz power amplifier with 40.7% peak PAE, 15dBm OP1dB, and 50mW Psat in 0.13μm SiGe BiCMOS

2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC) ◽

10.1109/isscc.2014.6757423 ◽

2014 ◽

Author(s):

Seyed Yahya Mortazavi ◽

Kwang-Jin Koh

Keyword(s):

Power Amplifier ◽

Sige Bicmos ◽

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A 43% PAE inverse Class-F power amplifier at 39–42 GHz with a λ/4-transformer based harmonic filter in 0.13-µm SiGe BiCMOS

2016 IEEE MTT-S International Microwave Symposium (IMS) ◽

10.1109/mwsym.2016.7540383 ◽

2016 ◽

Author(s):

Seyed Yahya Mortazavi ◽

Kwang-Jin Koh

Keyword(s):

Power Amplifier ◽

Harmonic Filter ◽

Sige Bicmos ◽

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A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier

IEICE Transactions on Electronics ◽

10.1587/transele.e94.c.1193 ◽

2011 ◽

Vol E94-C (7) ◽

pp. 1193-1198 ◽

Author(s):

Akihiro ANDO ◽

Yoichiro TAKAYAMA ◽

Tsuyoshi YOSHIDA ◽

Ryo ISHIKAWA ◽

Kazuhiko HONJO

Keyword(s):

Power Amplifier ◽

Average Power ◽

Gan Hemt ◽

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Design flow for a SiGe BiCMOS based power amplifier

2009 International Semiconductor Conference ◽

10.1109/smicnd.2009.5336537 ◽

2009 ◽

Author(s):

Mladen Bozanic ◽

Saurabh Sinha ◽

Monuko du Plessis ◽

Alexandru Muller

Keyword(s):

Power Amplifier ◽

Design Flow ◽

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A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ◽

10.1109/csics.2012.6340065 ◽

2012 ◽

Author(s):

Valiallah Zomorrodian ◽

Umesh K. Mishra ◽

Robert A. York

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Gan Hemt ◽

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Investigating Continuous Class-F Power Amplifier Using Nonlinear Embedding Model

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2017.2701316 ◽

2017 ◽

Vol 27 (6) ◽

pp. 593-595 ◽

Author(s):

Ekta Aggrawal ◽

Karun Rawat ◽

Patrick Roblin

Keyword(s):

Power Amplifier ◽

Nonlinear Embedding ◽

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Class-F power amplifier using a multi-frequency composite right/left-handed transmission line harmonic tuner

IEEE MTT-S International Microwave Symposium Digest, 2005. ◽

10.1109/mwsym.2005.1517142 ◽

2006 ◽

Author(s):

A. Dupuy ◽

K.M.K.H. Leong ◽

T. Itoh

Keyword(s):

Transmission Line ◽

Power Amplifier ◽

Left Handed ◽

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Class-F Power Amplifier with Dual-Mode Filtering Response

10.1109/csrswtc52801.2021.9631698 ◽

2021 ◽

Author(s):

Liheng Zhou ◽

Xinyu Zhou ◽

Zhen Xing Yang ◽

Wing Shina Chan

Keyword(s):

Power Amplifier ◽

Dual Mode ◽

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