A Fully-Integrated Band-Switchable CMOS Power Amplifier for Wireless Applications

2021 ◽  
Author(s):  
S. Babak Hamidi ◽  
Suman Saripalli ◽  
Debasis Dawn
Keyword(s):  
Power Amplifier ◽  
Fully Integrated ◽  
Wireless Applications

Fully-integrated GaAs HBT power amplifier MMIC with high linear output power for 3 GHz-band broadband wireless applications

2006 ◽  
Vol 42 (22) ◽  
pp. 1286 ◽  
Author(s):  
M. Hirata ◽  
T. Oka ◽  
M. Hasegawa ◽  
Y. Amano ◽  
Y. Ishimaru ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Broadband Wireless ◽  
Fully Integrated ◽  
Wireless Applications

scholarly journals Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI

2021 ◽  
Vol 11 (15) ◽  
pp. 6708
Author(s):  
Janne P. Aikio ◽  
Alok Sethi ◽  
Mikko Hietanen ◽  
Jere Rusanen ◽  
Timo Rahkonen ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Complementary Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Error Vector Magnitude ◽  
Fully Integrated ◽  
Power Added Efficiency ◽  
Wireless Applications ◽  
Ofdm Signal ◽  
New Radio

This paper presents a fully integrated, four-stack, single-ended, single stage power amplifier (PA) for millimeter-wave (mmWave) wireless applications that was fabricated and designed using 45 nm complementary metal oxide semiconductor silicon on insulator (CMOS SOI) technology. The frequency of operation is from 20 GHz to 30 GHz, with 13.7 dB of maximum gain. The maximum RF (radio frequency) output power (Pout), power-added efficiency (PAE) and output 1 dB compression point are 20.5 dBm, 29% and 18.8 dBm, respectively, achieved at 24 GHz. The error vector magnitude (EVM) of 12.5% was measured at an average channel power of 14.5 dBm at the center of the the 3GPP/NR (third generation partnership project/new radio) FR2 band n258—i.e., 26 GHz—using a 100 MHz 16-quadrature amplitude modulation (QAM) 3GPP/NR orthogonal frequency division modulation (OFDM) signal.

A High-Power Low-Distortion GaAs HBT Power Amplifier for Mobile Terminals Used in Broadband Wireless Applications

2007 ◽  
Vol 42 (10) ◽  
pp. 2123-2129 ◽  
Author(s):  
Tohru Oka ◽  
Masatomo Hasegawa ◽  
Michitoshi Hirata ◽  
Yoshihisa Amano ◽  
Yoshiteru Ishimaru ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Mobile Terminals ◽  
Broadband Wireless ◽  
Wireless Applications ◽  
Low Distortion

Fully Integrated CMOS Power Amplifier With Efficiency Enhancement at Power Back-Off

2008 ◽  
Vol 43 (3) ◽  
pp. 600-609 ◽  
Author(s):  
Gang Liu ◽  
Peter Haldi ◽  
Tsu-Jae King Liu ◽  
Ali M. Niknejad
Keyword(s):  
Power Amplifier ◽  
Efficiency Enhancement ◽  
Fully Integrated
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