SOI lateral bipolar transistor with drive current >3mA/μm

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s.2013.6716518 ◽

2013 ◽

Author(s):

J. Cai ◽

T. H. Ning ◽

C. D'Emic ◽

J.-B. Yau ◽

K. K. Chan ◽

...

Keyword(s):

Bipolar Transistor ◽

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MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19884122 ◽

1988 ◽

Vol 49 (C4) ◽

pp. C4-579-C4-582

Author(s):

J. G. METCALFE ◽

R. C. HAYES ◽

A. J. HOLDEN ◽

A. P. LONG

Keyword(s):

Microwave Power ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

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Simulation of bipolar transistor 2T937 on the basis of experimental static and frequency characteristics

Izmeritel`naya Tekhnika ◽

10.32446/0368-1025it-2018-8-65-68 ◽

2018 ◽

pp. 65-68 ◽

Author(s):

A. L. HVALIN

Keyword(s):

Frequency Characteristics ◽

Bipolar Transistor

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Reduction of Wind Disturbance by Optimizing the Drive Current of Pt Ultra-thin Film Hydrogen Sensor

IEEJ Transactions on Sensors and Micromachines ◽

10.1541/ieejsmas.140.92 ◽

2020 ◽

Vol 140 (4) ◽

pp. 92-96

Author(s):

Yuto Goda ◽

Hiroto Shobu ◽

Kenji Sakai ◽

Toshihiko Kiwa ◽

Kenji Kondo ◽

...

Keyword(s):

Thin Film ◽

Hydrogen Sensor ◽

Wind Disturbance ◽

Drive Current ◽

Ultra Thin Film

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Analysis of dependence of dV CE/dt on turn-off characteristics with a 1200 V double-gate insulated gate bipolar transistor

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abd29f ◽

2021 ◽

Vol 60 (SB) ◽

pp. SBBD02

Author(s):

Yoko Iwakaji ◽

Tomoko Matsudai ◽

Tatsunori Sakano ◽

Kazuto Takao

Keyword(s):

Bipolar Transistor ◽

Double Gate ◽

Insulated Gate Bipolar Transistor

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Zero current switching performance of 1200 V PT-clustered insulated gate bipolar transistor

3rd IET International Conference on Power Electronics, Machines and Drives (PEMD 2006) ◽

10.1049/cp:20060149 ◽

2006 ◽

Author(s):

J.C. Nicholls ◽

M.R. Sweet ◽

E.M.S. Narayanan

Keyword(s):

Bipolar Transistor ◽

Current Switching ◽

Insulated Gate Bipolar Transistor ◽

Switching Performance ◽

Zero Current Switching ◽

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PnP-type InP/InGaAsP/InP bipolar transistor

Electronics Letters ◽

10.1049/el:19850699 ◽

1985 ◽

Vol 21 (21) ◽

pp. 989 ◽

Author(s):

L.M. Su ◽

H. Schroeter-Janssen ◽

K.C. Li ◽

N. Grote

Keyword(s):

Bipolar Transistor

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10 Gbit/s AlGaAs/GaAs heterojunction bipolar transistor decision circuit IC

Electronics Letters ◽

10.1049/el:19900084 ◽

1990 ◽

Vol 26 (2) ◽

pp. 122 ◽

Author(s):

J. Akagi ◽

Y. Kuriyama ◽

K. Morizuka ◽

M. Asaka ◽

K. Tsuda ◽

...

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Decision Circuit

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Using constant base current as a boundary condition for one-dimensional AlGaAs/GaAs heterojunction bipolar transistor simulation

Electronics Letters ◽

10.1049/el:19900964 ◽

1990 ◽

Vol 26 (18) ◽

pp. 1501 ◽

Author(s):

L.L. Liou ◽

C.I. Huang

Keyword(s):

Boundary Condition ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

One Dimensional ◽

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InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor

Electronics Letters ◽

10.1049/el:20020201 ◽

2002 ◽

Vol 38 (6) ◽

pp. 289 ◽

Author(s):

B.P. Yan ◽

C.C. Hsu ◽

X.Q. Wang ◽

E.S. Yang

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Double Heterojunction

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Insights into radiation displacement defect in an insulated-gate bipolar transistor

AIP Advances ◽

10.1063/5.0041444 ◽

2021 ◽

Vol 11 (2) ◽

pp. 025137

Author(s):

Kihyun Kim ◽

Jungsik Kim

Keyword(s):

Bipolar Transistor ◽

Insulated Gate Bipolar Transistor

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