Evidence for the Antisite Defect B/sub As/ in Si and B Co-Implanted and B Implanted Undoped Si Lec-Gaas Crystal

2005 ◽  
Author(s):  
Z.G. Wang ◽  
C.H. Wang ◽  
Y.L. Liu ◽  
Y. Luo ◽  
S.K. Wan ◽  
...  
Keyword(s):  
Antisite Defect ◽  
Gaas Crystal ◽  
Lec Gaas

Role of Dislocations in Semi-Insulation Mechanism in Undoped LEC GaAs Crystal

1982 ◽  
Vol 21 (Part 2, No. 11) ◽  
pp. L721-L723 ◽  
Author(s):  
Taibun Kamejima ◽  
Fumio Shimura ◽  
Yoshishige Matsumoto ◽  
Hisao Watanabe ◽  
Junji Matsui
Keyword(s):  
Gaas Crystal ◽  
Lec Gaas

Low indium-doped LEC GaAs crystal growth employing thermal stress analysis

1986 ◽  
Vol 78 (3) ◽  
pp. 533-537 ◽  
Author(s):  
T. Matsumura ◽  
F. Sato ◽  
A. Shimura ◽  
T. Kitano ◽  
J. Matsui
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Stress Analysis ◽  
Gaas Crystal ◽  
Thermal Stress Analysis ◽  
Lec Gaas

Magnetic field effect on residual impurity concentrations for LEC GaAs crystal growth

1987 ◽  
Vol 84 (2) ◽  
pp. 247-252 ◽  
Author(s):  
Kazutaka Terashima ◽  
Johji Nishio ◽  
Shoichi Washizuka ◽  
Masayuki Watanabe
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Field Effect ◽  
Magnetic Field Effect ◽  
Gaas Crystal ◽  
Residual Impurity ◽  
Lec Gaas

A new apparatus for double-crucible LEC GaAs crystal growth

1987 ◽  
Vol 82 (4) ◽  
pp. 643-646 ◽  
Author(s):  
H. Okada ◽  
T. Katsumata ◽  
M. Eguchi ◽  
T. Fukuda
Keyword(s):  
Crystal Growth ◽  
Gaas Crystal ◽  
Double Crucible ◽  
Lec Gaas ◽  
New Apparatus

Effect of Ambient Gas on Undoped LEC GaAs Crystal

1983 ◽  
Vol 22 (Part 1, No. 11) ◽  
pp. 1652-1655 ◽  
Author(s):  
Haruo Emori ◽  
Takao Matsumura ◽  
Toshio Kikuta ◽  
Tsuguo Fukuda
Keyword(s):  
Gaas Crystal ◽  
Lec Gaas ◽  
Ambient Gas

Effects of arsenic ambient controlled LEC GaAs crystal growth technique on residual impurities

1987 ◽  
Vol 85 (3) ◽  
pp. 553-556
Author(s):  
Shoichi Ozawa ◽  
Hiroo Miyairi ◽  
Junji Kobayashi ◽  
Tsuguo Fukuda
Keyword(s):  
Crystal Growth ◽  
Gaas Crystal ◽  
Growth Technique ◽  
Lec Gaas ◽  
Residual Impurities

Effect of Water Content of B2O3Encapsulant on Semi-Insulating LEC GaAs Crystal

1985 ◽  
Vol 24 (Part 2, No. 5) ◽  
pp. L291-L293 ◽  
Author(s):  
Haruo Emori ◽  
Toshio Kikuta ◽  
Tomoki Inada ◽  
Takeshi Obokata ◽  
Tsuguo Fukuda
Keyword(s):  
Water Content ◽  
Gaas Crystal ◽  
Effect Of Water ◽  
Lec Gaas

Generation Rule of the Slip Dislocation in LEC GaAs Crystal

1986 ◽  
Vol 25 (Part 2, No. 7) ◽  
pp. L530-L533 ◽  
Author(s):  
Tomohisa Kitano ◽  
Tetsuya Ishikawa ◽  
Haruhiko Ono ◽  
Junji Matsui
Keyword(s):  
Gaas Crystal ◽  
Slip Dislocation ◽  
Lec Gaas ◽  
Generation Rule
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