Role of Dislocations in Semi-Insulation Mechanism in Undoped LEC GaAs Crystal

1982 ◽  
Vol 21 (Part 2, No. 11) ◽  
pp. L721-L723 ◽  
Author(s):  
Taibun Kamejima ◽  
Fumio Shimura ◽  
Yoshishige Matsumoto ◽  
Hisao Watanabe ◽  
Junji Matsui
Keyword(s):  
Gaas Crystal ◽  
Lec Gaas

Low indium-doped LEC GaAs crystal growth employing thermal stress analysis

1986 ◽  
Vol 78 (3) ◽  
pp. 533-537 ◽  
Author(s):  
T. Matsumura ◽  
F. Sato ◽  
A. Shimura ◽  
T. Kitano ◽  
J. Matsui
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Stress Analysis ◽  
Gaas Crystal ◽  
Thermal Stress Analysis ◽  
Lec Gaas

Magnetic field effect on residual impurity concentrations for LEC GaAs crystal growth

1987 ◽  
Vol 84 (2) ◽  
pp. 247-252 ◽  
Author(s):  
Kazutaka Terashima ◽  
Johji Nishio ◽  
Shoichi Washizuka ◽  
Masayuki Watanabe
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Field Effect ◽  
Magnetic Field Effect ◽  
Gaas Crystal ◽  
Residual Impurity ◽  
Lec Gaas

A new apparatus for double-crucible LEC GaAs crystal growth

1987 ◽  
Vol 82 (4) ◽  
pp. 643-646 ◽  
Author(s):  
H. Okada ◽  
T. Katsumata ◽  
M. Eguchi ◽  
T. Fukuda
Keyword(s):  
Crystal Growth ◽  
Gaas Crystal ◽  
Double Crucible ◽  
Lec Gaas ◽  
New Apparatus

Effect of Ambient Gas on Undoped LEC GaAs Crystal

1983 ◽  
Vol 22 (Part 1, No. 11) ◽  
pp. 1652-1655 ◽  
Author(s):  
Haruo Emori ◽  
Takao Matsumura ◽  
Toshio Kikuta ◽  
Tsuguo Fukuda
Keyword(s):  
Gaas Crystal ◽  
Lec Gaas ◽  
Ambient Gas

Cathodoluminescence and Photoluminescence Spectroscopy Study of Low Temperature Molecular Beam Epitaxy GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
R. Enrique Viturro ◽  
Michael R. Melloch ◽  
Jerry M. Woodall
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
Annealed Material ◽  
Excess Concentration ◽  
Lec Gaas ◽  
Substrate Temperatures ◽  
Barrier Model ◽  
Lt Gaas

ABSTRACTWe report a cathodoluminescence (CL) and photoluminescence (PL) study of molecular beam epitaxy grown GaAs at low substrate temperatures (LT GaAs), and semi-insulating LEC GaAs. The as grown LT GaAs material shows intense deep level emissions which can be associated with an excess concentration of Arsenic. These emissions subside with annealing for a few minutes at temperatures above 450 ° C. CL measurements clearly show an extremelly reduced concentration of traps in the post-growth 600 ° C annealed material. These results account for a diminished role of electronic point defects in controlling the insulative behavior of LT GaAs and strongly support the “buried” Schottky barrier model.

Effects of arsenic ambient controlled LEC GaAs crystal growth technique on residual impurities

1987 ◽  
Vol 85 (3) ◽  
pp. 553-556
Author(s):  
Shoichi Ozawa ◽  
Hiroo Miyairi ◽  
Junji Kobayashi ◽  
Tsuguo Fukuda
Keyword(s):  
Crystal Growth ◽  
Gaas Crystal ◽  
Growth Technique ◽  
Lec Gaas ◽  
Residual Impurities

Effect of Water Content of B2O3Encapsulant on Semi-Insulating LEC GaAs Crystal

1985 ◽  
Vol 24 (Part 2, No. 5) ◽  
pp. L291-L293 ◽  
Author(s):  
Haruo Emori ◽  
Toshio Kikuta ◽  
Tomoki Inada ◽  
Takeshi Obokata ◽  
Tsuguo Fukuda
Keyword(s):  
Water Content ◽  
Gaas Crystal ◽  
Effect Of Water ◽  
Lec Gaas

Generation Rule of the Slip Dislocation in LEC GaAs Crystal

1986 ◽  
Vol 25 (Part 2, No. 7) ◽  
pp. L530-L533 ◽  
Author(s):  
Tomohisa Kitano ◽  
Tetsuya Ishikawa ◽  
Haruhiko Ono ◽  
Junji Matsui
Keyword(s):  
Gaas Crystal ◽  
Slip Dislocation ◽  
Lec Gaas ◽  
Generation Rule
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