A new apparatus for double-crucible LEC GaAs crystal growth

1987 ◽  
Vol 82 (4) ◽  
pp. 643-646 ◽  
Author(s):  
H. Okada ◽  
T. Katsumata ◽  
M. Eguchi ◽  
T. Fukuda
Keyword(s):  
Crystal Growth ◽  
Gaas Crystal ◽  
Double Crucible ◽  
Lec Gaas ◽  
New Apparatus

Low indium-doped LEC GaAs crystal growth employing thermal stress analysis

1986 ◽  
Vol 78 (3) ◽  
pp. 533-537 ◽  
Author(s):  
T. Matsumura ◽  
F. Sato ◽  
A. Shimura ◽  
T. Kitano ◽  
J. Matsui
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Stress Analysis ◽  
Gaas Crystal ◽  
Thermal Stress Analysis ◽  
Lec Gaas

Magnetic field effect on residual impurity concentrations for LEC GaAs crystal growth

1987 ◽  
Vol 84 (2) ◽  
pp. 247-252 ◽  
Author(s):  
Kazutaka Terashima ◽  
Johji Nishio ◽  
Shoichi Washizuka ◽  
Masayuki Watanabe
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Field Effect ◽  
Magnetic Field Effect ◽  
Gaas Crystal ◽  
Residual Impurity ◽  
Lec Gaas

Effects of arsenic ambient controlled LEC GaAs crystal growth technique on residual impurities

1987 ◽  
Vol 85 (3) ◽  
pp. 553-556
Author(s):  
Shoichi Ozawa ◽  
Hiroo Miyairi ◽  
Junji Kobayashi ◽  
Tsuguo Fukuda
Keyword(s):  
Crystal Growth ◽  
Gaas Crystal ◽  
Growth Technique ◽  
Lec Gaas ◽  
Residual Impurities

Boron- and stoichiometry-related defect engineering during B2O3-free GaAs crystal growth

2009 ◽  
Vol 6 (12) ◽  
pp. 2778-2784 ◽  
Author(s):  
F.-M. Kiessling ◽  
M. Albrecht ◽  
K. Irmscher ◽  
M. Roßberg ◽  
P. Rudolph ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Gaas Crystal ◽  
Defect Engineering ◽  
Related Defect

Thermal stress inhibition in double crucible Czochralski large diameter crystal growth

2005 ◽  
Vol 274 (1-2) ◽  
pp. 307-316 ◽  
Author(s):  
O.A. Louchev ◽  
S. Kumaragurubaran ◽  
S. Takekawa ◽  
K. Kitamura
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Large Diameter ◽  
Double Crucible
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