A self-consistent calculation of band structure in silicon nanowires using a tight-binding model

2008 ◽  
Author(s):  
E. Sarrazin ◽  
S. Barraud ◽  
F. Triozon ◽  
A. Bournel
Keyword(s):  
Band Structure ◽  
Silicon Nanowires ◽  
Tight Binding ◽  
Tight Binding Model ◽  
Binding Model ◽  
Consistent Calculation ◽  
Self Consistent

Self-consistent tight binding model adapted for hydrocarbon systems

2005 ◽  
Vol 31 (8) ◽  
pp. 585-595 ◽  
Author(s):  
D. A. Areshkin ◽  
O. A. Shenderova ◽  
J. D. Schall ◽  
D. W. Brenner
Keyword(s):  
Tight Binding ◽  
Tight Binding Model ◽  
Binding Model ◽  
Self Consistent

scholarly journals Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells

2000 ◽  
Vol 5 (S1) ◽  
pp. 970-976
Author(s):  
A. Bonfiglio ◽  
M. Lomascolo ◽  
G. Traetta ◽  
R. Cingolani ◽  
A. Di Carlo ◽  
...  
Keyword(s):  
Experimental Data ◽  
Quantum Wells ◽  
Electric Fields ◽  
Tight Binding ◽  
Ground Level ◽  
Analytic Model ◽  
Tight Binding Model ◽  
Binding Model ◽  
Emission Energy ◽  
Self Consistent

The spectroscopic investigation of GaN/AlGaN quantum wells reveals that the emission energy of such structures is determined by four parameters, namely composition, well-width, strain and charge density. The experimental data obtained by varying these parameters are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight-binding model.

scholarly journals Tight-binding Central Interaction Model for the Band Structure of Silicon

1984 ◽  
Vol 37 (4) ◽  
pp. 407
Author(s):  
GP Betteridge
Keyword(s):  
Band Structure ◽  
Tight Binding ◽  
Interaction Model ◽  
Diamond Lattice ◽  
Nearest Neighbour ◽  
Tight Binding Model ◽  
Binding Model ◽  
Central Interaction

We consider a simple tight-binding model involving all interactions between first and second nearest-neighbour (n.n.) bonds in the diamond lattice. We show that the band structure may be solved analytically in the central approximation in which all second n.n. bond interactions of the same type, for example all bonding: bonding or all bonding: antibonding interactions, are considered equal. The k dependence of the solution is given in terms of the corresponding s-band eigenvalues, which are determined by the topology of the structure.

Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Bonfiglio ◽  
M. Lomascolo ◽  
G. Traetta ◽  
R. Cingolani ◽  
A. Di Carlo ◽  
...  
Keyword(s):  
Experimental Data ◽  
Quantum Wells ◽  
Electric Fields ◽  
Tight Binding ◽  
Ground Level ◽  
Analytic Model ◽  
Tight Binding Model ◽  
Binding Model ◽  
Emission Energy ◽  
Self Consistent

AbstractThe spectroscopic investigation of GaN/AlGaN quantum wells reveals that the emission energy of such structures is determined by four parameters, namely composition, well-width, strain and charge density. The experimental data obtained by varying these parameters are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight-binding model.

scholarly journals Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model

2010 ◽  
Vol 39 (9) ◽  
pp. 1902-1908 ◽  
Author(s):  
Neophytos Neophytou ◽  
Martin Wagner ◽  
Hans Kosina ◽  
Siegfried Selberherr
Keyword(s):  
Thermoelectric Properties ◽  
Silicon Nanowires ◽  
Tight Binding ◽  
Tight Binding Model ◽  
Binding Model
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