2008 International Conference on Simulation of Semiconductor Processes and Devices
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9781424417537
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3D Monte Carlo simulation of Tri-Gate MOSFETs using tetrahedral finite elements

2008 ◽  
Author(s):  
Manuel Aldegunde ◽  
Antonio J. Garcia-Loureiro ◽  
Antonio Martinez ◽  
Karol Kalna
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Finite Elements ◽  
3D Monte Carlo

Band calculation for the hexagonal and FCC chalcogenide Ge2Sb2Te5

2008 ◽  
Author(s):  
Enrico Piccinini ◽  
Thierry Tsafack ◽  
Fabrizio Buscemiy ◽  
Rossella Brunettiy ◽  
Massimo Rudan ◽  
...  
Keyword(s):  
Band Calculation

Comparative Simulation Study of GNR-FETs using EHT- and TB-based NEGF

2008 ◽  
Author(s):  
Ming Zhang ◽  
Qiushi Ran ◽  
Ximeng Guan ◽  
Jinyu Zhang ◽  
Yan Wang ◽  
...  
Keyword(s):  
Simulation Study

Wigner Monte Carlo approach to quantum transport in nanodevices

2008 ◽  
Author(s):  
P. Dollfus ◽  
D. Querlioz ◽  
J. Saint-Martin ◽  
V.-N. Do ◽  
A. Bournel
Keyword(s):  
Monte Carlo ◽  
Quantum Transport ◽  
Monte Carlo Approach

Consistent higher-order transport models for SOI MOSFETs

2008 ◽  
Author(s):  
Martin Vasicek ◽  
Johann Cervenka ◽  
Markus Karner ◽  
Tibor Grasser
Keyword(s):  
Higher Order ◽  
Transport Models

Effects of quantum confinement on interface trap occupation in 4H-SiC MOSFETs

2008 ◽  
Author(s):  
Siddharth Potbhare ◽  
Akin Akturk ◽  
Neil Goldsman ◽  
Aivars Lelis
Keyword(s):  
Quantum Confinement ◽  
Interface Trap

Ion implantation model for channeling through multi-layers

2008 ◽  
Author(s):  
T. Yamanaka ◽  
K. Nishi ◽  
H.D. Nguyen ◽  
M. Mochizuki ◽  
H. Hayashi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Implantation Model
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