Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study

Author(s):  
Kyosuke Kobinata ◽  
Takashi Nakayama
2019 ◽  
Vol 216 ◽  
pp. 111056 ◽  
Author(s):  
Jiaqi Chen ◽  
Zhaofu Zhang ◽  
Yuzheng Guo ◽  
John Robertson

RSC Advances ◽  
2020 ◽  
Vol 10 (25) ◽  
pp. 14746-14752
Author(s):  
Ran Xu ◽  
Na Lin ◽  
Zhitai Jia ◽  
Yueyang Liu ◽  
Haoyuan Wang ◽  
...  

A low Schottky barrier height (SBH) of metal–semiconductor contact is essential for achieving high performance electronic devices.


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